To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
We present an attempt to clarify the valence band order of ZnO and MgxZn1−xO films grown by pulsed laser deposition (PLD) on sapphire substrates. We derive the dependence of spin orbit interaction (Δso) and crystal field interaction (Δcf) on the temperature, strain and cation replacement (Zn with Mg) and compared this with theoretical predictions. The strain was varied by using different orientated sapphire substrates (c-, r-, and m-plane orientations) and by varying the film thicknesses. All these investigations support the conclusion that the symmetry order of the valence band is Γ7-Γ9-Γ7 for ZnO and MgxZn1−xO for x ≤ 0.55.
Material interaction during integration of tungsten gate stack for 1 Gb DRAM was investigated by Transition Electron Microscopy (TEM), X-ray Diffraction analysis (XRD) and Auger Electron Spectroscopy (AES). During selective side-wall oxidation tungsten gate conductor undergoes a structural transformation. The transformation results in the reduction of tungsten crystal lattice spacing, re-crystallization of tungsten and/or growth of grains. During a highly selective oxidation process, a relatively small but noticeable amount of oxygen was incorporated into the tungsten layer. The incorporation of oxygen is attributed to the formation of a stable WO x (x<2) composite.
Email your librarian or administrator to recommend adding this to your organisation's collection.