Previously, we have made diodes[1,2] and transistors  as well as very effective realtime solid state neutron detectors  out of semiconducting boron carbide deposited on silicon or silicon carbide‥
In this work the recent fabrication of a new class of highly photosensitive boron carbide diodes is discussed. These diodes exploit the electronic behavior differences of the isomers of film precursors, the closo-dicarbododecaboranes. These differences were observed in photoemission and inverse photoemission studies where the HOMO-LUMO (highest occupied molecular orbital-lowest unoccupied molecular orbital) gap variations upon deposition varied strongly with the isomeric configuration. Based on these results, p-n junctions were formed by plasma enhanced chemical vapor of ortho and meta carborane, respectively, on both nickel and aluminum substrates. These diodes exhibit fourth-quadrant conductivity, making them exciting new photovoltaic conversion devices.