Gallium arsenide crystals, both VPE and Cz grown, were annealed with a pulsed Nd:YAG laser. Gold Schottky diodes were fabricated and defects were studied using the DLTS technique. The native defect E(0.83eV) was found to anneal while other electron traps, E(0.39eV) in both materials and E(0.30eV)in Cz material, remained after irradiation. A new trap, E(0.70eV), was observed after laser irradiation in both materials.
Cz GaAs samples implanted with both Ga and As were also laser annealed. The E(0.83eV) level was not observed after implantation. The E(0.30eV) trap and new levels, E(0.44eV) and E(0.6leV) were observed. C-V measurements and defect profiles indicate that the recrystallized layer is far from defect free.