Three-dimensional (3D) integration has emerged as a potential solution to the wiring limits imposed on chip performance, power dissipation, and packaging form factor beyond the 14 nm technology node. In 3D integrated circuits (ICs), the through-silicon via (TSV) is a critical element connecting die-to-die in the integrated stack structure. The thermal expansion mismatch between copper (Cu) vias and silicon (Si) can induce complex stresses in TSV structures to drive interfacial failure and Cu extrusion, degrading the performance and reliability of 3D interconnects. This article reviews current studies on thermal stresses and their effects on reliability of TSV structures. Recent results from measurements of stress and plasticity characteristics of Cu TSV structures are reviewed, including wafer curvature, micro-Raman spectroscopy, and synchrotron x-ray microdiffraction techniques. The effects of the Cu microstructure on stress and reliability, particularly on via extrusion and the device keep-out zone in TSV structures, are discussed. Based on the analysis of the reliability impact, we explore the potential of material and processing optimization to build reliable TSV structures for 3D ICs.

In this article, we investigated the effect of Sn grain structure on the electromigration (EM) reliability of Sn–2.5Ag (wt%) solder joints used in flip-chip packages. The electron backscattering diffraction technique was applied to characterize the Sn grain size and orientation of the solder joints. Failure analyses on Sn–2.5Ag solder joints after EM tests showed that the Sn grain structure was important in controlling the kinetics of the intermetallic compound growth and void formation under EM. Further microstructural analysis revealed that the grain sizes and orientations of the solder joints after multiple solder reflows were statistically different from those with a single solder reflow and resulted in an improved EM reliability. Thermal annealing effect was also investigated to separate the thermal effect from the EM-induced effect. Results obtained in this study demonstrated that EM reliability of Pb-free solder joints could be improved by optimization of the Sn grain structure.

In this study, we performed nanoindentation experiments on two sets of silicon nanolines (SiNLs) of widths 24 nm and 90 nm, respectively, to investigate the mechanical behavior of silicon structures at tens of nanometer scale. The high height-to-width aspect ratio (∼15) SiNLs were fabricated by an anisotropic wet etching (AWE) method, having straight and nearly atomically flat sidewalls. In the test, buckling instability was observed at a critical load, which was fully recoverable upon unloading. It was found that friction at the contact between the indenter and SiNLs played an important role in the buckling response. Based on a finite element model (FEM), the friction coefficient was estimated to be in a range of 0.02 to 0.05. The strain to failure was estimated to range from 3.8% for 90 nm lines to 7.5% for 24 nm lines.

GaN nanodots and nanorods were successfully grown on Si (111) substrates by molecular beam epitaxy. Photocurrent densities of GaN nanodots were quite small compared with thick GaN layer grown by metal-organic vapor phase epitaxy. The current density, however, increases with GaN nanodot density. The highest photocurrent density of the GaN nanodots was higher than that of the layer structure with similar thickness (up to 10 nm) to the nanodot height. GaN nanorods have much higher photocurrent density than that of GaN nanodots. Enough nanostructure size for light absorption is important to achieve good photoelectrochemical performance.

A monodisperse spherical Y2O3:Eu3+ phosphor was prepared by a homogeneous precipitation method. The mean size of the phosphor particles (MSPP) was successfully controlled by changing the volume ratio of normal alcohol (RA) (propanol) in the solvents mixed between deionized water and normal propanol. When the RA was increased from 0 to 0.7, the MSPP decreased while maintaining a high yield of >95%. Although the prepared phosphor samples were fired at the same temperature, the thermal energy was delivered more efficiently into the inner side of the phosphor particles with the decrease of the MSPP. Therefore, the crystallinity and also the photoluminescence (PL) intensity of the phosphor increased with the decrease in the MSPP. In addition, because the numbers of Eu3+ ions located near the particle surfaces increased with the decrease of particle size, the ratio of PL intensity caused by the 5D0–7F2 transition to that caused by 5D0–7F1 transition increased from 10.8 to 12.7 with the decrease in MSPP.

Single-crystalline with good optical properties aligned ZnO nanonails were grown on steel alloy substrate without the use of metal catalyst or additives by the thermal evaporation process using high purity metallic zinc powder and oxygen as source materials for zinc and oxygen, respectively. Detailed morphological studies by FESEM revealed that the obtained nanonails are grown in a high density over the whole substrate surface and are exhibiting perfect hexagonal-shaped caps. The diameters of the nanonails at their tops and bases are ranges from 120∼160nm and 50∼70 nm, respectively. The detailed structural characterizations confirmed that the synthesized nanostructures are single-crystalline and grown along the c-axis direction. Raman scattering and room-temperature photoluminescence studies demonstrated the wurtzite hexagonal phase and good optical properties, respectively for the grown nanonails.

A facile and convenient aqueous route has been employed to synthesize well -aligned ZnO nanorods. Field emission scanning electron microscopy studies of ZnO nanorod arrays grown at 70°C on ZnO/Si substrates show fine homogeneous surface. The average diameter of ZnO nanorod is in between 50-60 nm .The length of each nanorod is about 400-500 nm. Structural analysis showed that the ZnO nanorods are single crystalline with wurtzite hexagonal phase. Room temperature photoluminescence spectra of the ZnO nanorod arrays exhibit ultra violet emission and green emission. In addition, selective growth of ZnO nanorods on patterned ITO glass substrate is obtained. Each nanorod has diameter of 50 - 70 nm and their length upto 500 nm. XRD pattern shows that ZnO nanorods on patterned ITO substrate are single crystalline in nature with wurtzite hexagonal phase. The room temperature photoluminescence from the aligned ZnO nanorods showed a strong ultra violet emission at 378 nm and broad deep level visible emission at 580 nm.

A mucin coat is deposited on rabbit embryos during passage through the oviduct; rabbit blastocysts cultured from the 1-cell stage in vitro have no mucin coat. When cultured blastocysts are transferred to recipients, the lack of mucin coat might account in part for subsequent failure of pregnancy. We have investigated the possibility that mucin coat deposition is induced following transfer of in vitro 72 h-cultured blastocysts to oviducts of asynchronous or synchronous recipients. One-cell embryos were collected by flushing oviducts 19–20 h post-coitus and were cultured in vitro for 72 h until they reached the blastocyst stage. The blastocysts were transferred to the oviducts of recipients that were synchronized either with the donors (synchronous) or 1 day later than the donors (asynchronous). They were recovered after 24–48 h and the mucin coat thickness and embryo degeneration rate were measured. The degeneration rate of blastocysts recovered from uteri of synchronous recipients was higher than that from asynchronous recipients (72.2% vs 40.0%). The mucin coats around embryos recovered from oviducts of asynchronous recipients after 48 h were thicker than those from synchronous recipients. More asynchronous recipients were pregnant and gave birth to more pups than synchronous recipients. These results indicate that the oviducts of asynchronous recipients secreted more mucin around the transferred embryos, causing higher rates of implantation of the in vitro-cultured blastocysts.

Two short gravity cores were retrieved to obtain palaeoclimatic information from Maxwell and Admiralty bays, King George Island, South Shetland Islands. AMS 14C age dates, sediment properties (grain size, TOC and CaCO3) and stable oxygen and carbon isotope compositions of benthiδ foraminifera (Globocassidulina biora) show downcore variations that characterize depositional conditions during the late Holocene. In particular, δ18O values of benthic foraminifera are lowest at approximately 2500 yr bp in both cores. Allowδ18O time-equivalent excursion in both cores is interpreted to reflect a distinct subglacial meltwater discharge intensified by warm climatic conditions. An increased proportion of fine-grained detritus and higher TOC in the cores at this level suggests that enhanced meltwater supply may have resulted in increased primary productivity. This meltwater discharge event provides evidence of climatic instability during the late Holocene at King George Island.

The main result provides mild conditions under which a closed, orientable, PL 4-manifold $N = N_1\,\#\,N_2$ with $\pi_1(N_e)$ residually finite ($e=1,2$) is a codimension-5 PL fibrator. The paper also presents a rich variety of conditions on a closed 4-manifold $N^4$ under which every PL map between manifolds, where the domain is orientable and all point inverses are copies of $N^4$, must be an approximate fibration.

Assessment of nuclear status is important when a biopsied single blastomere is used for embryo sexing. In this study we investigated the nuclear status of blastomeres derived from 8- to 16-cell stage in vitro fertilised bovine embryos to determine the representativeness of a single blastomere for embryo sexing. In 24 embryos analysed, the agreement in sex determination between a biopsied single blastomere and a matched blastocyst by polymerase chain reaction (PCR) was 83.3%. To clarify the discrepancies, karyotypes of blastomeres in 8- to 16-cell stage bovine embryos were analysed. We applied vinblastine sulfate at various concentrations and for different exposure times for metaphase plate induction in 8- to 16-cell stage bovine embryos. The 1.0 mg/ml vinblastine sulfate treatment for 15 h was selected as the most effective condition for induction of a metaphase plate (>45%). Among 22 embryos under these conditions, only 8 of 10 that had a normal diploid chromosome complement showed a sex chromosomal composition of XX or XY (36.4%) and 2 diploid embryos showed mosaicism of the opposite sex of XX and XY in blastomeres of the embryo (9.1%). One haploid embryo contained only one X-chromosome (4.5%). Four of another 11 embryos with a mixoploid chromosomal complement contained a haploid blastomere with a wrong sex chromosome (18.2%). In conclusion, assessment of nuclear status of 8- to 16-cell stage bovine embryos revealed that morphologically normal embryos had a considerable proportion of mixoploid blastomeres and sex chromosomal mosaicism; these could be the cause of discrepancies in the sex between biopsied single blastomeres and matched blastocysts by PCR.

Let N be a closed s-Hopfian n-manifold with residually finite, torsion free π1 (N) and finite H1(N). Suppose that either πk(N) is finitely generated for all k ≥ 2, or πk(N) ≅ 0 for 1 < k < n – 1, or n ≤ 4. We show that if N fails to be a co-dimension 2 fibrator, then N cyclically covers itself, up to homotopy type.

We investigated the solid phase crystallization (SPC) behavior of 1000 Å amorphous Si (a- Si) films deposited by plasma enhanced chemical vapor deposition (PECVD) at various temperatures and were able to enhance the grain size of the crystallized polysilicon films using double layers of a-Si filns. The deposition temperature of monolayer a-Si films varied from 200 to 400 °C and the films were recrystallized at 600 °C in nitrogen. As the deposition temperature increased, the incubation time was decreased and both the nucleation rate and growth rate were increased. Especially, the nucleation rate strongly depended on the deposition temperature.

Since the Si-SiO2 interface provides a large number of nucleation sites, it is desirable to suppress nucleation at the interface. As an idea we employed a structure with double layer a-Si films. The bottom a-Si layer deposited at lower temperature could suppress the nucleation at the Si-SiO2 interface while the top a-Si layer deposited at higher temperature could nucleate with a smaller number of nucleation sites. The incubation time and transformation behavior were determined by the deposition temperature of the top layer. As an example, the grain size of the double layer film deposited sequentially at 150 °C and 200 °C enhanced to 1.8 μm while that of the monolayer film deposited at 200 °C was 1.4 μm.