Temperature dependent performance of ferroelectric non-volatile memories is an important issue, that impacts memory device reliability. In general, the device temperature strongly influences the speed of polarization reversal in ferroelectric capacitors. In particular, the switching speed decreases with the decreasing temperature, which may give rise to incomplete switching. In the present work, the recently proposed Nucleation-Limited Switching model for ferroelectric thin films is extended for description of the temperature dependence of the polarization reversal. The model is shown to be valid for the temperature range important for memory applications. This model enables quantitative prediction of the switching performance of ferroelectric capacitors at different temperatures based upon results obtained at room temperature. The temperature and voltage range where the proposed concept is applicable is discussed in context of limits of validity of the Nucleation-Limited Switching model.