71 results
Evaluation of electron overflow in nitride-based LEDs influenced by polarization charges at electron blocking layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1736 / 2014
- Published online by Cambridge University Press:
- 11 February 2015, mrsf14-1736-t04-04
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- 2014
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Growths of AlInN Single Layers and Distributed Bragg Reflectors for VCSELs
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- MRS Online Proceedings Library Archive / Volume 1736 / 2014
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- 07 May 2015, mrsf14-1736-t13-08
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- 2014
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Oxygen related shallow acceptor in GaN
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- MRS Online Proceedings Library Archive / Volume 831 / 2004
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- 01 February 2011, E5.10
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- 2004
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Strain evolution and phonons in AlN/GaN superlattices
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
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- 01 February 2011, Y5.60
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- 2003
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Effects of Si-doping on the Microstructure of AlGaN/GaN Multiple-quantum-well
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
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- 01 February 2011, Y5.33
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- 2003
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Platelet Inversion Domains Induced by Mg-doping in ELOG AlGaN Films
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- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y5.21
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- 2003
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Distinct Magnesium Incorporation Behavior in Laterally Grown AlGaN
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
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- 11 February 2011, L1.11
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- 2002
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Hollow core dislocations in Mg-doped AlGaN
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- MRS Online Proceedings Library Archive / Volume 743 / 2002
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- 11 February 2011, L10.9
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- 2002
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Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 7 / 2002
- Published online by Cambridge University Press:
- 13 June 2014, e7
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- 2002
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Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I7.8.1
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- 2001
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Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 957-969
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- 2000
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High Efficiency Uv Emitter Using High Quality GaN/AlxGa1−xN Multi-Quantum Well Active Layer
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G12.3
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- 2000
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Growth of Crack-Free thick AlGaN Layer and its Application to GaN-Based Laser Diode
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 452-458
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- 2000
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Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
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- 17 March 2011, G12.7
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- 2000
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The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 398-404
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- 2000
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Mass Transport, Faceting and Behavior of Dislocations in GaN
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 90-96
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- 2000
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High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 42-48
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- 2000
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Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G5.7
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- 2000
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Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 87-92
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- 1999
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Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 357-362
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- 1999
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