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The study provides a comprehensive insight into how an initial receiving hospital without adequate capacity adapted to coping with a mass casualty incident after the Formosa Fun Coast Dust Explosion (FFCDE).
Data collection was via in-depth interviews with 11 key participants. This was combined with information from medical records of FFCDE patients and admission logs from the emergency department (ED) to build a detailed timeline of patients flow and ED workload changes. Process tracing analysis focused on how the ED and other units adapted to coping with the difficulties created by the patient surge.
The hospital treated 30 victims with 36.3% average total body surface area burn for over 5 hours alongside 35 non-FFCDE patients. Overwhelming demand resulted in the saturation of ED space and intensive care unit beds, exhaustion of critical materials, and near-saturation of clinicians. The hospital reconfigured human and physical resources differently from conventional drills. Graphical timelines illustrate anticipatory or reactive adaptations. The hospital’s ability to adapt was based on anticipation during uncertainty and coordination across roles and units to keep pace with varying demands.
Adapting to beyond-surge capacity incident is essential to effective disaster response. Building organizational support for effective adaptation is critical for disaster planning.
Resistance switching random-access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND flash memory. Such resistance modulation usually involves ion migration and filament formation, which usually lead to relatively low device reliability and yield. Resistance switching can also come from an entirely electronic origin, as in nanometallic memory, by electron trapping and detrapping. Recent research has revealed additional merits of its mechanism, which entails smart, atomic-sized floating gates that can be easily engineered in amorphous Si, oxides, and nitrides. This article addresses the basic ideas of nanometallic ReRAM, which may also be a contender for analogue computing and non-von Neumann-type computation.
Previous studies have indicated that there is dopamine transporter (DAT) dysregulation and P300 abnormality in adults with attention-deficit hyperactivity disorder (ADHD); however, the correlations among the three have not been fully explored.
A total of 11 adults (9 males and 2 females) with ADHD and 11 age-, sex-, and education-level-matched controls were recruited. We explored differences in DAT availability using single-photon emission computed tomography and P300 wave of event-related potentials between the two groups. The correlation between DAT availability and P300 performance was also examined.
DAT availability in the basal ganglia, caudate nucleus, and putamen was significantly lower in the ADHD group. Adults with ADHD had lower auditory P300 amplitudes at the Pz and Cz sites, as well as longer Fz latency than controls. DAT availability was negatively correlated to P300 latency at Pz and Fz.
Adults with ADHD had both abnormal DAT availability and P300 amplitude, suggesting that ADHD is linked to dysfunction of the central dopaminergic system and poor cognitive processes related to response selection and execution.
The purpose of this study was to investigate the effects of 8-week green tea extract (GTE) supplementation on promoting postexercise muscle glycogen resynthesis and systemic energy substrate utilisation in young college students. A total of eight healthy male participants (age: 22·0 (se 1·0) years, BMI: 24·2 (se 0·7) kg/m2, VO2max: 43·2 (se 2·4) ml/kg per min) participated in this study. GTE (500 mg/d for 8 weeks) was compared with placebo in participants in a double-blind/placebo-controlled and crossover study design with an 8-week washout period. Thereafter, all participants performed a 60-min cycling exercise (75 % VO2max) and consumed a carbohydrate-enriched meal immediately after exercise. Vastus lateralis muscle samples were collected immediately (0 h) and 3 h after exercise, and blood and gaseous samples were collected during the 3-h postexercise recovery period. An 8-week oral GTE supplementation had no effects on further promoting muscle glycogen resynthesis in exercised human skeletal muscle, but the exercise-induced muscle GLUT type 4 (GLUT4) protein content was greater in the GTE supplementation trial (P<0·05). We observed that, during the postexercise recovery period, GTE supplementation elicited an increase in energy reliance on fat oxidation compared with the placebo trial (P<0·05), although there were no differences in blood glucose and insulin responses between the two trials. In summary, 8-week oral GTE supplementation increases postexercise systemic fat oxidation and exercise-induced muscle GLUT4 protein content in response to an acute bout of endurance exercise. However, GTE supplementation has no further benefit on promoting muscle glycogen resynthesis during the postexercise period.
The deformation mechanisms responsible for the strength and ductility of nanostructured Cu and Cu–Al alloys processed by high pressure torsion have been analyzed in frames of a model of elastic–plastic medium and using the available experimental data. The income of the Peierls strength, as well as solid solution hardening, dislocation hardening, twinning hardening, taking into account possible annihilation processes has been estimated. It was shown that in the Cu–5 at.% Al alloy annihilation processes contribute to the maintenance of deformation. The material is hardened by the accumulation of dislocations at the twin boundaries, postponing the moment of reaching the ultimate strength. In the Cu–16 at.% Al alloy processes of the annihilation are limited. As a result, the possibility of further deformation is limited and the degree of homogeneous deformation decreases in comparison with the case of the Cu–5 at.% Al alloy. Significantly increased concentration of deformation vacancies contributes to the destruction of the former alloy as well.
Approximately half of the variation in wellbeing measures overlaps with variation in personality traits. Studies of non-human primate pedigrees and human twins suggest that this is due to common genetic influences. We tested whether personality polygenic scores for the NEO Five-Factor Inventory (NEO-FFI) domains and for item response theory (IRT) derived extraversion and neuroticism scores predict variance in wellbeing measures. Polygenic scores were based on published genome-wide association (GWA) results in over 17,000 individuals for the NEO-FFI and in over 63,000 for the IRT extraversion and neuroticism traits. The NEO-FFI polygenic scores were used to predict life satisfaction in 7 cohorts, positive affect in 12 cohorts, and general wellbeing in 1 cohort (maximal N = 46,508). Meta-analysis of these results showed no significant association between NEO-FFI personality polygenic scores and the wellbeing measures. IRT extraversion and neuroticism polygenic scores were used to predict life satisfaction and positive affect in almost 37,000 individuals from UK Biobank. Significant positive associations (effect sizes <0.05%) were observed between the extraversion polygenic score and wellbeing measures, and a negative association was observed between the polygenic neuroticism score and life satisfaction. Furthermore, using GWA data, genetic correlations of -0.49 and -0.55 were estimated between neuroticism with life satisfaction and positive affect, respectively. The moderate genetic correlation between neuroticism and wellbeing is in line with twin research showing that genetic influences on wellbeing are also shared with other independent personality domains.
Endeavours to control urogenital schistosomiasis on Unguja Island (Zanzibar) have focused on school-aged children. To assess the impact of an associated health education campaign, the supervised use of the comic-strip medical booklet Juma na Kichocho by Class V pupils attending eighteen primary schools was investigated. A validated knowledge and attitudes questionnaire was completed at baseline and repeated one year later following the regular use of the booklet during the calendar year. A scoring system (ranging from 0.0 to 5.0) measured children’s understandings of schistosomiasis and malaria, with the latter being a neutral comparator against specific changes for schistosomiasis. In 2006, the average score from 751 children (328 boys and 423 girls) was 2.39 for schistosomiasis and 3.03 for malaria. One year later, the score was 2.43 for schistosomiasis and 2.70 for malaria from 779 children (351 boys and 428 girls). As might be expected, knowledge and attitudes scores for schistosomiasis increased (+0.05), but not as much as originally hoped, while the score for malaria decreased (−0.33). According to a Kolmogorov–Smirnov test, neither change was statistically significant. Analysis also revealed that 75% of school children misunderstood the importance of reinfection after treatment with praziquantel. These results are disappointing. They demonstrate that it is mistaken to assume that knowledge conveyed in child-friendly booklets will necessarily be interpreted, and acted upon, in the way intended. If long-term sustained behavioural change is to be achieved, health education materials need to engage more closely with local understandings and responses to urogenital schistosomiasis. This, in turn, needs to be part of the development of a more holistic, biosocial approach to the control of schistosomiasis.
Two-step growth method of low pressure chemical vapor deposition(LPCVD) process was employed to fabricate the ZnO:B-TCO film; For the first layer, the seed layer with a heavy doping concentration was deposited on the glass substrate, the film having higher deposition rate were then grown on the top of the first layer; It shows that the doping situations of the seed layer play an important role in electrical and optical performance of the whole ZnO:B-TCO layer, and the combination of this two properties is optimal when the doping ratio (B2H6/DEZ) was 0.4;
The unique properties of silicon oxide materials, no matter intrinsic or doped, utilized in thin film solar cells (TFSCs) in the area of photovoltaic (PV) are making TFSCs one of the most attractive photovoltaic technologies for the development of high-performing electricity production units to be integrated in everyday life. In comparison to other silicon materials, the particular diphasic structure of silicon oxide materials, in which hydrogenated microcrystalline silicon (μc-Si:H) crystallites are surrounded by an oxygen-rich hydrogenated amorphous silicon (a-Si:H) phase, causes them present excellent photoelectrical material properties, such as a low-parasitic absorption in the broadband spectral range, independent controllability of longitudinal and lateral conductivity, refractive indices (3.5-2.0), band gap (2.0-2.6 eV) and conductivity tenability (with orders of 1-10-9 S/cm) with oxygen doping, and so on. Various types of silicon oxide materials, including intrinsic, p- or n- type, further applied in TFSCs have also played significant roles in improving the efficiency of various types of single-, dual-, and triple-junction thin-film solar cells from both the optical and electrical points of view. In this paper, we present our latest progress in studying the performance improvement role of intrinsic or doped silicon oxide materials in pin-type a-Si:H, a-SiGe:H, and μc-Si:H single-junction solar cells. By effectively tuning the band gap values of intrinsic a-SiOx:H materials with oxygen doping and adopting the layers with a suitable band gap (1.86 eV) as the P/I buffer layers of a-Si:H solar cells fabricated on metal organic chemical vapor deposition (MOCVD) boron-doped zinc oxide (ZnO:B) substrates, a significant Voc increases up to 909 mV and an excellent external quantum efficiency (EQE) response of 75% at the 400 nm typical wavelength can be achieved by matching the band gap discontinuity between the p-type nc-SiOx:H window and a-Si:H intrinsic layers. The serious leakage current characteristics of pin-type narrow-gap (Eg<1.5 eV) a-SiGe:H single-junction solar cells can also be finely tuned by integrating an n-type μc-SiOx:H layer with a small oxygen content in addition to improving the long-wavelength response, an effective approach gives rise to the highest FF of 70.62% for pin-type a-SiGe:H single-junction solar cells with an average band gap of 1.48 eV. In addition, our studies proved that the application of p-type μc-SiOx:H window layers in μc-Si:H single-junction solar cells can effectively improve the short-wavelength light coupling by suppressing the parasitic absorption and promoting the anti-reflectivity with a graded refractive index profile. On the basis of the optimum single-junction solar cells with omnipotent silicon oxide materials, an initial efficiency of 16.07% has been achieved for pin-type a-Si:H/a-SiGe:H/μc-Si:H triple-junction solar cells with an active area of 0.25 cm2. The omnipotent properties of silicon oxide layers in TFSCs, including effective optical coupling and trapping, suitability in compensating for the band gap discontinuity, the shunt-quenching capacity, and so on, make them likely to be extended to other types of solar cells such as polycrystalline chalcopyrite Cu(In,Ga)Se2 (CIGS) and perovskite-sensitized solar cells, opening up new opportunities for acquiring solar cells with higher performance.
Wireless network has been emerged as one of the most promising technologies for sensor-integrated applications so far. The ever-increasing demand in long-term chronic monitoring of vital or essential signals is driving a technology revolution in dealing with critical issues of clinical, healthcare, fitness, and wellness, creating multidisciplinary collaborations to benefit mankind. The voltage-controlled oscillator has been one of the important building blocks in this regard. In this paper, we report on study concerning the design and implementation of such a key circuit, with particular emphasis on a μW-level low-power design. All the aspects regarding the oscillator are detailed. The proposed circuit structure and experimental results justifying our work are given as proof of concept.
A novel allergy biosensor is designed and fabricated by using thin film bulk acoustic resonator (TFBAR) devices with shear mode ZnO piezoelectric thin films. To fabricate TFBAR devices, the off-axis RF magnetron sputtering method for the growth of piezoelectric ZnO piezoelectric thin films is adopted. The influences of the relative distance and sputtering parameters are investigated. In this report, the piezoelectric ZnO thin films with tilting angle are set by controlling the deposition parameters. The properties of the shear mode ZnO thin films are investigated by X-ray diffraction and scanning electron microscopy. The frequency response is measured using an HP8720 network analyzer with a CASCADE probe station. The resonance frequency of the shear mode is 796.75 MHz. The sensitivity of the shear mode is calculated to be 462.5 kHz·cm2/ng.
We report the results of using sputtering and negative carbon ion sources to prepare thin films of carbon nitride. In this work, we compare the structural, tribological, and optical properties of the carbon nitride films that were prepared by two different ion assisted techniques. In the first approach we used a magnetron gun to sputter deposit carbon in a nitrogen atmosphere. The second method utilized a beam of negatively charged carbon ions of 1 to 5 μA/cm2 current density impinging the substrate simultaneously with a positive nitrogen ion beam produced by a Kaufman source. We were able to synthesize microscopically smooth coatings with the carbon to nitrogen ratio of 1 : 0.47. These films possess wear rates lower than 5×10−7 mm3/Nm and friction coefficients in the range of 0.16 to 0.6. Raman spectroscopy revealed that the magnetron sputtered films are more structurally disordered than those formed with the negative carbon ion gun. FTIR showed the presence of the C≡N stretching mode in both types of films. Finally, spectroscopic ellipsometry produced films with dielectric constants as low as 2.3 in the photon energy range from 1.2 to 5 eV.
A low-resistance back contact for n-CdS/p-CdTe solar cells has been developed, which utilizes a thermally evaporated MoOx thin film as the buffer layer between the p-CdTe and the back electrode. The low-resistance behavior of back contact is attributed to the high work function of MoOx, which reportedly is as high as 6.8 eV, and thus adequately matches that of p-CdTe. With MoOx as the buffer, a variety of common metals, even those with a low work function such as Al, have been found to be useful as the electrode in forming the back contact. Other advantages of the MoOx buffer include dry application by vacuum deposition, and thus it is particularly suitable for the fabrication of ultra-thin CdTe solar cells without introducing additional shorting defects. Surface cleaning of CdTe films prior to MoOx deposition has also been studied. The cell stability has been evaluated through thermal annealing tests. Thermal degradation has been explained in terms of oxidation of the metal electrodes. CdTe cells with high efficiency and good stability have been demonstrated with MoOx as the back contact buffer and Ni as the electrode.