We have theoretically investigated the subband structure of two coupled Si δ-doped
GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation
between the two doping layers. The electronic properties such as the effective potential, the
density profile, the subband energies, the subband populations and Fermi energy have been
calculated by solving Schrödinger and Poisson equations self-consistently. In this study, we have
seen that the subband structure is quite sensitive to the separation between the two doping layers.
We conclude that, if the coupling between two δ-doped GaAs layers is
significant, the mobility of electrons in this structure is very high compared to single
δ-doped structures because of the strong overlap between the electrons and the
ionized donors in single δ-doped structures.