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In this paper, the design and the measurements of three-dimensional through silicon vias (TSVs) based-integrated solenoids embedded within high-resistive silicon is presented. Prior to silicon implementation, a rigorous theoretical analysis is proposed to put in obviousness the advantages of using such coil architecture for L and S band applications. This analysis, demonstrates a clear reduction of the footprint passive function lying on the external substrate together with a reduced capacitive coupling with the local environment. Two-port radio frequency measurements have been performed in a wide-frequency range (100 MHz – 50 GHz) in order to support the theoretical investigations. Solenoids exhibit high-quality factors below 4 GHz – Q = 25 @ 2 GHz for a 800 pH device – and clearly outperforms classical planar architecture considered in most of the integrated circuit processes. Two different modeling approaches (compact modeling and EM modeling) are then proposed in order to speed-up their design implementation in a typical CAD design flow. Based on the available data, a good agreement is shown between and simulated data.
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