The dependence of IC fabrication on the Chemical Mechanical Planarization (CMP) process increases as the device features go down to 0.25 micron or beyond. Due to the tighter CMP process spec, it is very important to reduce the within wafer non-uniformity (WIWNU%) to achieve higher process yield. The symmetrical increment of linear velocity at wafer edge is not sufficient to change wafer edge profile by breaking the matched speed rule. A better solution is through the change of head design for a fixed platen from the polisher design point of view. This study demonstrates the improvement of the CMP process performance, especially at the wafer edge, from the modification of the floating type polish head. The best WIWNU% from a single air chamber head is about 5.12% at 6-mm edge exclusion (EE). In order to obtain better pad deformation control, the retaining-ring pressure chamber is separated from that of the sub-carrier. The average WIWNU% is about 4% for 3-mm and 5-mm EE from two-pressure-chamber head. Due to the limitation of retaining-ring pressure effect, a third pressure chamber is further added that can be extended the edge control up to 1 inch from the wafer edge. The WIWNU% is about 3.8% at 5-mm edge exclusion with low down forces. The slurry and insert types also show effect on the wafer edge profile. It has been also proven that this three-pressure-chamber head is able to reduce the post-CMP thickness variation from the ILD production wafer, especially at wafer edges. More detailed information and CMP mechanism will be discussed in this paper.