We prove the local asymptotic normality for the full parameters of the normal inverseGaussian Lévy process X, when we observe high-frequency data XΔn,X2Δn,...,XnΔnwith sampling mesh Δn → 0 and the terminalsampling time nΔn → ∞. Therate of convergence turns out to be (√nΔn, √nΔn, √n, √n) for the dominating parameter(α,β,δ,μ), where α stands for the heaviness of thetails, β the degree of skewness, δ the scale, andμ the location. The essential feature in our study is that the suitablynormalized increments of X in small time is approximatelyCauchy-distributed, which specifically comes out in the form of the asymptotic Fisherinformation matrix.

BaTiO3/SrTiO3(001) epitaxial thin films were prepared at various growth rates by pulsed laser deposition, and their heterostructures were evaluated by synchrotron x-ray diffraction measurements and cross-sectional scanning transmission electron microscopy observations. In a film grown at a low deposition rate (0.01 nm/s), misfit dislocations are found near the interface and a fully relaxed BaTiO3 thin film grows epitaxially on the substrate. On the other hand, a film grown at a high deposition rate (0.04 nm/s) consists of strained and relaxed BaTiO3 lattices. Our results showed that the critical thickness of BaTiO3/SrTiO3(001) epitaxial thin films can be controlled by the deposition rate and that the critical thickness increases with increasing the deposition rate, and by adjusting the deposition rate we were able to prepare epitaxial thin films consisting of fully strained BaTiO3, partially strained BaTiO3 or fully relaxed BaTiO3. We have also achieved the growth controlling of BaTiO3 thin films on SrTiO3(001) substrates with SrRuO3 bottom electrode layer.

The photo FET having a photosensitive insulator layer showed excellent photo-switching properties upon illuminating the gate dielectric layer, because the gate capacitor was rapidly charged up by providing a large amount of photo-generated charges in the dielectric layer to the gate capacitor. In this study, we have tried to give a memory function to the photo FET. Further, we have tried to fabricate flexible photo FETs by using only solution processes in order to utilize the photo FET as flexible photo sensor and photo memory devices. As a result, we have succeeded in observing the memory effect of the photo FET and the photo-switching behavior of the flexible photo FETs

We present a new observational evidence of the magnetic field reconnection in emerging flux regions (EFR). Our observations show that Hα surges are the first active manifestation of emerging magnetic field in some EFRs. We call them EFR-surges. Examining their morphological and evolutionary characteristics, we conclude that they are produced by the magnetic field reconnection between the EFR and the pre-existing surrounding region.