Pseudomorphic Fe1-x Si films have been grown on Si(111) by molecular beam epitaxy (MBE) at room temperature (RT). Structural investigations revealed that the phase crystallizes in the cubic CsCl structure with a lattice constant close to half that of Si. Upon annealing, films thicker than 15Å undergo a phase transition to the stable bulk ε-FeSi, either in epitaxial or in polycrystalline form at temperatures around 300°C. Thinner films do not transform to the ε-FeSi phase. Instead they exhibit a continuous increase of the Si content up to the stoichiometry of FeSi2 The CsCl symmetry persists, exept for prolonged annealing close to the transition to βFeSi2, where γ-FeSi2 (CaF2 ) forms as an intermediate phase.