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Selective modification of surface reactivities with lasers, using either direct writing or projection method, is intrinsically a sensitive method to prepare a surface for highresolution and high-speed area selective thin film deposition. In this paper, we demonstrated the use of laser direct-writing and projection patterning techniques for selective modification of the electrochemical property of a polyimide surface. High quality and highresolution copper patterns on polyimide surfaces are produced when the surface-modified sample is subsequently placed in an electroless plating solution. These results demonstrated that the use of laser-selective-modification of surface properties in conjunction with other batch thin film deposition processes provides an attractive approach for area-selective metallization for a variety of applications in which high writing speed and high sensitivity are required.
In the GE High-Density Interconnect Process, thermoplastic polyetherimide adhesives with selectively variable glass transition temperatures (Tg's) are used as chip attach and overlay adhesive. Alternating layers of patterned metal and dielectric are then applied to fabricate the interconnect structure. Upper layer dielectrics are formed using a modified siloxane-polyimide that can be processed at temperatures below 200 °C. The unique materials requirements and materials development issues associated with this approach are discussed.
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