The structure-formation process and thermoelectric properties of binary and Fe-doped IrxSi1−x (0.30 ≤ x ≤ 0.41) thin films were investigated. The films were prepared by means of physical vapor deposition techniques, in particular by magnetron co-sputtering and electron beam co-evaporation. The amount of Fe dopant varied between 0 and 5 at.%. The phase-formation process depends on the volume fractions of the major components Ir and Si, whereas the small concentrations of dopant did not change the sequence of the crystalline phases formed. On the other hand, the thermoelectric transport properties correlate strongly with both the structure-formation process and the chemical composition of the films. Fe-doped iridium silicide films with useful thermoelectric power factors were successfully obtained by both magnetron co-sputtering and electron beam co-evaporation. A maximum thermoelectric power factor of 8.5 μW/(K2 cm) at 1200 K was observed for evaporated layers with thechemical composition Ir0.35Si0.63Fe0.02.

Epitaxial ReSi1.75 thin films of variable thickness between 15nm and 150nm have been prepared in an one step process by Facing Target Sputtering (FTS) onto heated (100) and (111)Si and SOS wafers. The epitaxial relations and film structure have been investigated by Xray diffraction and transmission electron microscopy. Epitaxial growth was found at a substrate temperature of 1070K. Thermoelectric properties were measured between 100K and 450K and compared to the transport behavior of bulk ReSi1.75 and polycrystalline films. A distinct dependence of both the conductivity and thermopower was found on the film thickness, on unintentional doping and on the film structure. The results show that epitaxial ReSi1.75 films prepared by FTS can be a basis for further investigations of thermoelectric silicide/silicon multilayers.