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Molybdenum disulfide (MoS2) is expected to be applied for devices in various fields owing to its unique characteristics. Establishing a high-productivity manufacturing method which yields high quality films is an important and unresolved issue for the practical applications of MoS2. Among different techniques conducted by researchers all over the world, our approach is cold-wall metal-organic chemical vapor deposition, and we previously reported the deposition of MoS2 with i-Pr2DADMo(CO)3, a novel Mo precursor [S. Ishihara, et al., MRS Advances 3, 379-384 (2018).]. In this study, with the aim of further improving the quality of the MoS2 film using this new Mo precursor, various film formation conditions were controlled and the influence on the film quality was investigated. X-ray photoelectron spectroscopy, atomic force microscopy and Raman spectroscopy were used as evaluation techniques of the samples. As a result, mm-scale uniform film was formed with the deposition time less than 30 min. at temperature as low as 400 °C to 500 °C. It was revealed that maintaining low Mo/S supply ratio (SRMo/S) is crucial in fabricating high quality films.
We report the investigation on the properties of a novel Te precursor (i-C3H7)2Te and its effectiveness in fabricating MoTe2. The vapor pressure of the precursor was obtained by measuring the pressure as a function of its temperature in a sealed chamber. As a result it showed a high vapor pressure of 552.1 Pa at room temperature. The decomposition of the precursor was also investigated using DFT calculation. It was shown that the most likely reaction during the course of the decomposition of (i-C3H7)2Te is (i-C3H7)2Te → H2Te + 2 C3H7. The effectiveness of the precursor on the fabrication of MoTe2 was also investigated. Sputter-deposited MoO3 was tellurized in a quartz-tube furnace at the temperature up to 440°C. The resulting film showed that the 80% of the original MoO3 was tellurized to form MoTe2. It was also shown that further optimization of tellurization is required in order to prevent formation of metal Mo and elemental Te.
We report the synthesis of MoS2(1-x)Te2x by co-sputtering deposition and effect of mixture on its bandgap. The deposition was carried out at room temperature, and the sputtering power on individual MoS2 and MoTe2 targets were varied to obtain films with different compositions. Investigation with X-ray photoelectron spectroscopy confirmed the formation of Mo-Te and Mo-S bonds after post-deposition annealing (PDA), and one of the samples exhibited composition ratio of Mo:S:Te = 1:1.2:0.8 and 1:1.9:0.1 achieving 1:2 ratio of metal to chalcogen. Bandgap of MoS1.2Te0.8 and MoS1.9Te0.1 was evaluated with Tauc plot analysis from the extinction coefficient obtained by spectroscopic ellipsometry measurements. The obtained bandgaps were 1.0 eV and 1.3 eV. The resulting bandgap was lower than that of bulk MoS2 and higher than that of bulk MoTe2 suggesting mixture of both materials was achieved by co-sputtering.
Molybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.
The aim of this study is to estimate the lifetime and 12-month prevalence, severity and treatment of Diagnostic and Statistical Manual of Mental Disorders fourth edition (DSM-IV) mental disorders in Japan based on the final data set of the World Mental Health Japan Survey conducted in 2002–2006.
Face-to-face household interviews of 4130 respondents who were randomly selected from Japanese-speaking residents aged 20 years or older were conducted from 2002 to 2006 in 11 community populations in Japan (overall response rate, 56%). The World Mental Health version of the World Health Organization Composite International Diagnostic Interview (WMH-CIDI), a fully structured, lay administered psychiatric diagnostic interview, was used for diagnostic assessment.
Lifetime/12-month prevalence of any DSM-IV common mental disorders in Japan was estimated to be 20.3/7.6%. Rank-order of four classes of mental disorders was anxiety disorders (8.1/4.9%), substance disorders (7.4/1.0%), mood disorders (6.5/2.3%) and impulse control disorders (2.0/0.7%). The most common individual disorders were alcohol abuse/dependence (7.3/0.9%), major depressive disorder (6.1/2.2%), specific phobia (3.4/2.3%) and generalized anxiety disorder (2.6/1.3%). While the lifetime prevalence of any mental disorder was greater for males and the middle-aged, the persistence (proportion of 12-month cases among lifetime cases) of any mental disorder was greater for females and younger respondents. Among those with any 12-month disorder, 15.3% were classified as severe, 44.1% moderate and 40.6% mild. Although a strong association between severity and service use was found, only 21.9% of respondents with any 12-month disorder sought treatment within the last 12 months; only 37.0% of severe cases received medical care. The mental health specialty sector was the most common resource used in Japan. Although the prevalence of mental disorders were quite low, mental disorders were the second most prevalent cause of severe role impairment among chronic physical and mental disorders.
These results suggest lower prevalence of mental disorders in Japan than that in Western countries, although the general pattern of disorders, risk factors and unmet need for treatment were similar to those in other countries. Greater lifetime prevalence for males and greater persistence for females seems a unique feature of Japan, suggesting a cultural difference in gender-related etiology and course of disorders. The treatment rate in Japan was lower than that in most other high-income countries in WMH surveys.
Molybdenum disulfide (MoS2), one of the transition-metal dichalcogenides, is a 2-dimensional semiconducting material that has a layered structure. Owing to excellent optical and electronic properties, the ultra-thin MoS2 film is expected to be used for various devices, such as transistors and flexible displays. In this study, we investigated the physical and chemical properties of sputtered-MoS2 film in the sub-10-nm region by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). As the results of Raman spectroscopy investigations, we observed two Raman modes, E12g and A1g, in the 2-dimensional MoS2 films. As the thickness of the MoS2 film decreased, the peak frequency difference between E12g and A1g modes increased. From the XPS investigations, we confirmed sulfur reductions from the 2-dimensional MoS2 films. Therefore, we considered that the sulfur vacancies in the MoS2 film affected the Raman peak positions. Moreover, we performed the additional sulfurization of sputtered-MoS2 films. From the XPS and Raman investigations, the quality of the sputtered-MoS2 films was improved by the additional sulfurization.
A fully coherent free electron laser (FEL) seeded with a higher-order harmonic (HH) pulse from high-order harmonic generation (HHG) is successfully operated for a sufficiently prolonged time in pilot user experiments by using a timing drift feedback. For HHG-seeded FELs, the seeding laser pulses have to be synchronized with electron bunches. Despite seeded FELs being non-chaotic light sources in principle, external laser-seeded FELs are often unstable in practice because of a timing jitter and a drift between the seeding laser pulses and the accelerated electron bunches. Accordingly, we constructed a relative arrival-timing monitor based on non-invasive electro-optic sampling (EOS). The EOS monitor made uninterrupted shot-to-shot monitoring possible even during the seeded FEL operation. The EOS system was then used for arrival-timing feedback with an adjustability of 100 fs for continual operation of the HHG-seeded FEL. Using the EOS-based beam drift controlling system, the HHG-seeded FEL was operated over half a day with an effective hit rate of 20%–30%. The output pulse energy was
at the 61.2 nm wavelength. Towards seeded FELs in the water window region, we investigated our upgrade plan to seed high-power FELs with HH photon energy of 30–100 eV and lase at shorter wavelengths of up to 2 nm through high-gain harmonic generation (HGHG) at the energy-upgraded SPring-8 Compact SASE Source (SCSS) accelerator. We studied a benefit as well as the feasibility of the next HHG-seeded FEL machine with single-stage HGHG with tunability of a lasing wavelength.
KNbO3 thick films were deposited on (100)c SrRuO3//(100)SrTiO3 substrates at 240 °C for 3 h by hydrothermal method. Film thickness increased linearly with increasing the deposition number of times and 130 μm thickness was achieved by the 6 time deposition. XRD analysis showed the growth of epitaxial orthorhombic films with the mixture orientation of (100), (010) and (001). Cross-sectional SEM observation showed that the 130 μm-thick film was dense and no obvious voids inside the film. In addition, the crystal structure change along film thickness direction was not detected from the cross-sectional Raman spectral observation.
The Shozu Herpes Zoster (SHEZ) Study was designed to clarify the incidence of and predictive and immunological factors for herpes zoster in a defined community-based Japanese population. As part of this series, a total of 5683 residents aged ⩾50 years received a varicella-zoster virus (VZV) skin test with VZV antigen, and 48 h later, the erythema and oedema were assessed by measuring the longest diameter. The diameters of both the erythema and oedema decreased with the increasing age of the subject. Sixty-three subjects contracted herpes zoster within a year after receiving the VZV skin test. Analysis of the herpes zoster incidence rate vs. the skin test reaction revealed that the shorter the diameter of erythema or oedema, the greater the likelihood of herpes zoster. These results demonstrated that the VZV skin test is an excellent surrogate marker for predicting the risk of herpes zoster.
Background: Thirty-three Japanese children and adolescents diagnosed with an anxiety disorder participated in individual or group Cognitive Behaviour Therapy (CBT) that was modelled after evidence-based intervention programs developed in Western countries. Method: The treatment consisted of: (a) building rapport and education; (b) identifying emotions and recognizing cognitive self-talk; (c) challenging anxious self-talk; (d) developing an anxiety hierarchy and in vivo exposures; and (e) planning for future challenges. Results: Three months following treatment, 20 of the 33 children and adolescents (60.91%) no longer met criteria for their principal anxiety disorders and 16 (48.48%) were free from all anxiety disorders. Self-reported anxiety, depression, and cognitive errors also decreased significantly from pre- to post-treatment and these gains were maintained at 3-month follow-up. For the most part, similar outcomes were found in both the group and individual formats of CBT. Conclusions: This study provides preliminary support for the transportability of CBT in both an individual and group format to Japan.
The mid-infrared wavelength region offers a plethora of possible applications ranging from sensing, medical diagnostics and free space communications, to thermal imaging and IR countermeasures. Hence group IV mid-infrared photonics is attracting more research interest lately. Sensing is an especially attractive area as fundamental vibrations of many important gases are found in the 3 to 14 μm spectral region. To realise group IV photonic mid-infrared sensors several serious challenges need to be overcome. The first challenge is to find suitable material platforms for the mid-infrared. In this paper we present experimental results for passive mid-infrared photonic devices realised in silicon-on-insulator (SOI), silicon-on-sapphire (SOS), and silicon on porous silicon (SiPSi). Although silicon dioxide is lossy in most parts of the mid-infrared, we have shown that it has potential to be used in the 3-4 μm region. We have characterized SOI waveguides with < 1 dB/cm propagation loss. We have also designed and fabricated SOI passive devices such as MMIs and ring resonators. For longer wavelengths SOS or SiPSi structures could be used. An important active device for long wavelength group IV photonics will be an optical modulator. We present relationships for the free-carrier induced electro-refraction and electro-absorption in silicon in the mid-infrared wavelength range. Electro-absorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electro-refraction modulation. We have examined the wavelength dependence of electro-refraction and electro-absorption, and found that the predictions suggest longer-wave modulator designs will in many cases be different than those used in the telecom range.
We report our main results on the development of un-cooled microbolometers based on hydrogenated amorphous Germanium-Silicon (a-GexSiy:H) thermo-sensing films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Our research has been conducted to improve both, the structure of the devices (pixels) and the performance characteristics of the amorphous Germanium-Silicon thermosensing films.
Our motivation is to produce microbolometers with much better performance characteristics (larger thermal coefficient of resistance, larger conductivity and better stability) than those available in commercial microbolometer arrays, based on boron doped hydrogenated amorphous silicon (a-Si:H,B).
As part of our latest research, we also report the study of what we believe is the next generation of thermosensing films based on Silicon and Geranium amorphous films with embedded nanocrystals in the amorphous matrix (polymorphous films). Those materials have several advantages over amorphous, as a lower defect density, better stability and better transport properties.
Most of the research on silicon-on-insulator integrated circuits has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands.
We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm . Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB  in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed . This OPO is tunable over 70 nm around a central wavelength of 2080 nm.
Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB . One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.
The concept of THz detection based on excitation of plasma waves in two-dimensional electron gas in Si FETs is one of the most attractive ones, as it makes possible the development of the large-scale integrated devices based on a conventional microelectronic technology including on-chip antennas and readout devices integration. In this work we report on investigations of Terahertz detectors based on low-cost silicon technology field effect transistors. We show that detectors, consisting of a coupling antenna and a n-MOS field effect transistor as rectifying element, are efficient for THz detection and imaging. We demonstrate that in the atmospheric window around 300 GHz, these detectors can achieve a record noise equivalent power below 10 pW/Hz0.5 and a responsivity above 90 kV/W once integrated with on-chip amplifier. We show also that they can be used in a very wide frequency range: from ∼0.2 THz up to 1.1 THz. THz detection by Si FETs pave the way towards high sensitivity silicon technology based focal plane arrays for THz imaging.
In this paper recent advances in terahertz-wave generation in graphene are reviewed. First, fundamental basis of the optoelectronic properties of graphene is introduced. Second, nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene is described to introduce a possibility of negative dynamic conductivity in a wide terahertz range. Third, recent theoretical advances toward the creation of current-injection graphene terahertz lasers are described. Fourth, unique terahertz dynamics of the two-dimensional plasmons in graphene are described. Finally, the advantages of graphene materials and devices for terahertz-wave generation are summarized.
The demand for low cost and disposable devices has driven the development of intelligent photodiodes, especially multispectral photodiodes that were first manufactured by Rieve et al. in 2000 . The most remarkable feature of these devices is the voltage-controlled spectral response. In this paper we present a-SiGe:H based bias sensitive ni3p photodiodes that have been fabricated successfully in a low temperature PECVD process. Multispectral diodes based on ni3p structures make use of an intrinsic layer divided into three regions. Further subdivision of the i-layer into different collection regions is the key to an unequivocal optical detection. In addition to the a-SiGe:H multispectral photodiodes developed at the IMT, there is an inestimable wealth of different sensor approaches that has been optimized for different applications. To optimize the separation of secondary colors (i.e. spectral signatures) it is necessary to separate only those response curves (i.e. bands) with a very high information density [2, 3]. In our case, samples of whitish powder suspected to be dangerous or illegal must be unequivocally characterized. There is need for an application specific band selection method by which various sensors can be compared and evaluated. Unfortunately it is not sufficient to optimize the spectral response only as discussed in . The requirements for measuring surroundings and the mechanical handling of all parameters together form a multivariate data set. Examined were in fact more than 5,000 measurement setup combinations, fictional and real, each considering 10 parameters that partially influence each other. The influence of all these parameters has to be examined, with the awareness of multivariate analysis .
Semiconductor-based thermistors are very attractive sensor materials for uncooled thermal infrared (IR) bolometers. Very large scale heterogeneous integration of MEMS is an emerging technology that allows the integration of epitaxially grown, high-performance IR bolometer thermistor materials with pre-processed CMOS-based integrated circuits for the sensor read-out. Thermistor materials based on alternating silicon (Si) and silicon-germanium (SiGe) epitaxial layers have been demonstrated and their performance is continuously increasing. Compared to a single layer of silicon or SiGe, the temperature coefficient of resistance (TCR) can be strongly enhanced to about 3 %/K, by using thin alternating layers. In this paper we report on the optimization of alternating Si/SiGe layers by advanced physically based simulations, including quantum mechanical corrections. Our simulation framework provides reliable predictions for a wide range of SiGe layer compositions, including concentration gradients. Finally, our SiGe thermistor layers have been evaluated in terms of low-frequency noise performance, in order to optimize the bolometer detectivity.