Four boron-implanted p-n junction silicon light-emitting diode structures were designed and simulated under an identical process flow by using Silvaco simulators. In the simulation, only boron-implant parameters and post-implant anneal conditions were varied to identify and compare the physical, electrical, and optical properties of the structures. It was found that a pillar structure with a wrapped p-n junction has the greatest radiative recombination rate. Regardless the structure type, the maximum radiative recombination rate always occurs within the p+ region. There exists a peak in the maximum radiative recombination rate when the anneal temperature increases from 700 to 1100 °C, and the anneal temperature at peak increases while the implant dose increases. Furthermore, the radiative recombination rate always increases with the implant dose but it saturates at a high dose. However, the radiative recombination rate does not change significantly with the implant energy.