Synthesis of InSb nanowires using chemical vapor deposition (CVD) is technically challenging due to the tuning of III-V vapor pressures. Growth parameters such as the choice of the metal catalyst, growth temperature and vapor pressure of constituents affect the morphology and stoichiometry of InSb nanowires. By controlling the growth temperature, it was possible to grow either stoichiometric InSb nanowires or In nanowires that contained no Sb within detectable limits. We present a simple model to show that the occurrence of native point defects in InSb is influenced by the growth kinetics and by the thermodynamics of defect formation. Results from this model are in good agreement with our experimental findings of the evidence of point defects in these nanowires.