In this paper an overview of our developments towards industrialization of thin film silicon PV modules is presented. Amorphous silicon p-i-n solar cells have been developed in medium size single-chamber R&D KAI-M PECVD reactors. High initial efficiencies of 10.6 % and stabilized of 8.6 % could be achieved for a 1 cm2 a-Si:H p-i-n solar cell of 0.20 m thick i-layer deposited on TCO from Asahi U type (SnO2). On our in-house developed LPCVD ZnO we could further improve the stabilized a-Si:H p-i-n efficiency to a similar level of 8.5 %. Incorporating such cells in commercial available front TCO of lower quality still leads to high initial mini-module aperture efficiencies (10 × 10 cm2) of 9.1% and stabilized ones of 7.46% (independently measured by ESTI JRC-Ispra).
Transferring the processes from the KAI-M to the industrial size 1.1×1.25 m2 KAI-1200 R&D reactors resulted in a-Si:H modules of 110.6 W using commercial TCO, respectively 112.4 W when applying in-house developed LPCVD front ZnO. Both initial module performances have been independently measured by ESTI laboratories of JRC Ispra. A typical temperature coefficient for the module power of -0.22 %/°C (relative loss) has been deduced from temperature dependent I-V characteristics at ESTI laboratories of JRC Ispra. Finally, micromorph mini-modules of 10 % initial aperture efficiency have been fabricated.