The cocktail source of BST was prepared by mixing of Ba, Sr, and Ti precursor solution with specific mole ratio. This cocktail source was vaporized and delivered into the warm wall reactor by liquid delivery system(LDS) and gaseous source was distributed by simple structure of gas injector instead of showerhead system. The thickness uniformity of BST on 8 inch wafers were less than 3%. The Ti composition uniformity of our films were less than the 1 at%(1σ ) at stoichiometric and near stoichiometric. Their dielectric constant was about 230 and leakage current density was lower than 10-8 A/cm2 under ±1V bias. Excellent step coverage and smooth (haze-free) surface morphology of BST films were obtained by a deposition using a noble dome type reactor. The merit of our warm wall type reactor also will be explained by excellent step coverage and the uniform composition with 3 dimensional structure. Our achievement should be applicable to the capacitor of next generation DRAM.