High quality SiO2 films are obtained by spin-coating wafers with a sol/gel of silicic acid in either a 2, 3, or 4-carbon linear-aliphatic alcohol. Some properties of the deposited film depend upon the solvent: such as density, tensile stress, and infrared spectrum. However, Rutherford-back-scattering analysis indicates the O:Si ratio (2.00±05) to be independent of the solvent. The infrared spectrum of the oxide exhibits Si-OSi absorption in the range 1070–1080 cm.−1 depending on the curing temperature and solvent system. (The weaker Si-OSi band is found at 804–810 cm.−1) In addition, low-temperature-cured (<500 °C) films show Si–OH absorption. Films hot-plate baked at 150–350 °C are stable but not fully cured. Films from propanol baked at 400 °C have a refractive index of 1.41–1.42 and a wet-etching rate in 30:1 BOE of ˜1250 Å/min. Films cured at 900 °C have a refractive index of 1.42–1.43, a wet-etching rate of ˜430 A/min, and are more dense by a factor of ˜1.25. Dry-etching with CHF3/O2 occurs at rates comparable to those of CVD oxides. Multiple applications lead to crack-free films as thick as 0.6–0.8 μ m. Deposition over aluminum-patterned topography results in a smoothing of the surface and suppression of hillock growth in the aluminum even after a 450 °C cure. SOX adheres to silicon, aluminum, and silicon dioxide. A boron-doped SOX is readily prepared.