Thin carbon films of ˜ 600 Å have been deposited on Si <111> wafers by striking an RF discharge in gas mixtures of hydrogen and methane. The deposition rate increased with increasing methane fraction. The peak rate was ˜ 1 Å/sec at an applied power density of 0.4 W cm−2. The films, with an average density of 2.54 gm cm−3, are amorphous in nature but exhibit broad diffraction maxima corresponding to interatcidc spacings of 2.05Å and 1. 15Å. Measurements of hydrogen concentration in the films showed that the hydrogen at. % [H/(H+C)] increased from 30 to 40% as the hydrogen fraction in the feed gas increased. By using a D2-CH4, we were also able to deduce that hydrogen molecules can be a large source of hydrogen trapped in the films.