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This study focuses on the impact of chemical solutions (hydrogen fluoride and tetramethylammonium hydroxide) on the change in properties of advanced porous low-k films. It was shown that there is no preferential removal of methyl groups during the dissolution process. With regard to wetting agents, the presence of isopropyl alcohol or surfactant (polyoxyethylene ether and alkoxylated diol type) in HF solution slowed down low-k film etching. Complete removal of surfactant residual usually requires an additional rinsing step using a low-molecular weight alcohol such as isopropyl alcohol.
The material properties of two ultra low-k organic polymers are characterized for copper interconnect integration. The k-values are 2.2-2.3 for both. Compared to OSG materials of similar k-values, these polymers have lower porosity and smaller pore size, achieved using selfassembled chemistry. Both materials demonstrate excellent resistance to plasma damage: no water uptake was detected after exposure to selected etching plasmas. This characteristic, combined with the small pore size and low porosity, results in the successful integration of the organic low-ks in 80 nm spacing with no significant increase in the integrated k-values.
It is found that higher open porosity in polymer A is accompanied by higher leakage current, which is not however linked to lower dielectric breakdown lifetimes.
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