Incoherent tungsten radiation has been used to recrystallize polysilicon films deposited on SiO2, grown on 75 mm diameter wafers. These films have been analyzed by a variety of techniques such as optical microscopy, Auger spectroscopy and TEM crosssectioning. These films are large (> 50 mm dia.) single crystals, and contain fewer defects and impurities than similar films recrystallized in graphite strip heater ovens. They do, however, contain the subgrain boundaries found previously, even when high purity Mbe polysilicon is used. In vertical tem cross-sectioning, in addition to the subgrain boundaries,we have seen crystallized particles of 50200 Å size in the si film at both the upper and lower SiO 2 boundaries. Although these particles could be relatedto formation of the subgrain boundaries, no definite correlation has been made.