Annealing in the 600–900°C temperature range, using either a halogen lamp for periods of seconds or a furnace for periods of minutes, has been applied to activate Be implanted InP samples. The Be was ion-implanted at room temperature into InP substrates. The substrates were uncapped and in close contact with another smooth surface during annealing.
It was found that in the 1017–1019/cm3 range, the acceptor concentration increased with the temperature of anneal. It was also found that redistribution effects decreased with decreasing anneal time. For short anneals, the optimum condition for an 80–90% activation in the 1017–1018/cm3 range was estimated to be 10 seconds at 950°C. It was also found that after rapid anneal, the carrier concentration profile closely approximated the asimplanted Be profile. In the case of 1018–1019/cm3 implants, which were rapidly annealed, there was a low concentration component (1016–1017/cm3) to the redistribution; this ancillary component to the main active distribution was detected by SIMS and was electrically inactive. For long term annealing this electrically inactive Be component was partly converted to substitutional Be and became electrically active. Rapid thermal annealing eliminated this conversion.