Book chapters will be unavailable on Saturday 24th August between 8am-12pm BST. This is for essential maintenance which will provide improved performance going forwards. Please accept our apologies for any inconvenience caused.
To send content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about sending content to .
To send content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about sending to your Kindle.
Note you can select to send to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
This paper deals with performance aspects of a selenium photoconductor on a thin film transistor array when used in x-ray imaging, e.g. for medical applications. We present the effects of doping structures within the Se on the spatial resolution, temporal response and dark current characteristics. Measurements were done on a 1922 pixel array with 200 μm pitch and a collecting electrode covering 50 % of the pixel area. Without additional measures the detector has a prohibitively slow response. With properly chosen doping structures the lateral conductivity can be engineered in a manner that the speed of the Se-TFT detector is increased to a level acceptable for video rate imaging. There is also a critical relationship between doping structures in the photoconductor and the spatial resolution of the detector. An idea of how these doping structures work in terms of resolution and speed of the detector is presented, together with proposals for an optimized doping scheme.
We present first results on the performance of flat dynamic x-ray detectors (FDXD) based on arrays of amorphous silicon thin film transistors (TFT) with charge storage capacitances and lead oxide as x-ray photoconductor. In order to increase the “active area” of every pixel, the layout of the array has been made in a multilevel arrangement, where the charge collecting electrode is separated from the underlying electronics by a thick insulating layer. This allows for a geometrical overlap of the pixel electrodes and TFTs. PbO has been chosen as the x-ray sensing material due to its very high x-ray sensitivity. The relevant detector properties of evaporated PbO layers are described along with results obtained on first FDXD devices with PbO.
Email your librarian or administrator to recommend adding this to your organisation's collection.