Spin-on mesoporous silica films were prepared on eight-inch wafers at SEMATECH by condensation of a silicate network around surfactant micellar structures. Copper single-damascene one-level test structures were built using mesoporous silica as the intermetal dielectric. No major structural failures were observed after chemical mechanical planarization on both blanket films and patterned wafers, indicating relatively good mechanical integrity for a highly porous structure. A simple silane spin-coating step used at SEMATECH on the films appears to be insufficient for complete dehydroxylation and silylation. The electrical test results on the metal comb structures showed good capacitance and leakage current distributions. However, capacitance and leakage current changes were observed after each post-CMP process step, and these changes could be correlated to moisture desorption/outgassing, which was also noted during k measurement. With controlled film synthesis and dehydroxylation conditions, mesoporous silica films with k ≤2.0 and elastic modulus of 4.0 GPa have been synthesized at PNNL. The results of the Cu one-level metal screening tests at SEMATECH combined with properties obtained at PNNL indicate that mesoporous molecularly-templated silicate films hold promise as ultra low k intermetal dielectrics.