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This paper considers the modelling of claim durations for existing claimants under income protection insurance policies. A claim is considered to be terminated when the claimant returns to work. Data used in the analysis were provided by the Life and Risk Committee of the Institute of Actuaries of Australia. Initial analysis of the data suggests the presence of a long-run probability, of the order of 7%, that a claimant will never return to work. This phenomenon suggests the use of mixed parametric regression models as a description of claim duration which include the prediction of a long-run probability of not returning to work. A series of such parametric mixture models was investigated, and it was found that the generalised F mixture distribution provided a good fit to the data and also highlighted the impact of a number of statistically significant predictors of claim duration.
This paper investigates the use of censored regression quantiles in the analysis of claim termination rates for income protection (IP) insurance. The paper demonstrates the importance of modeling quantiles given the growing interest of regulators and others in stochastic approaches to valuation of insurance liabilities and risk margins.
Raman scattering experiments on silicon-doped GaN show that donor impurities quench the Al(LO) Raman line at 735 cm−1. This is due to interaction between lattice vibrations and the free carrier plasma. The spatial variation of the Al(LO) signal has been imaged directly using newly developed instrumentation. Features with dimension under on micron are observed in faceted GaN crystallites. The variation in free carrier concentration is attributed to preferential incorporation of donor impurities during growth.
The MBE growth and related materials characterisation of InSb/InAlSb strained-layer structures is described. Band-gap considerations and critical thickness calculations are presented and indicate that this material system should offer considerable device potential. Detailed structural studies, performed using both transmission electron microscopy and X-ray diffraction, confirm the growth of high quality multiple quantum-wells, and 2K photoluminescence has shown corresponding energy upshifted transitions.