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A unified approach is presented which reconciles contradictory results
obtained in earlier studies of optical spectra of inhomogeneous electronic
systems in semiconductors: A consistent analysis of the optical data implies
strong deviations from quasi-equilibrium in the carrier distributions. The
non-equilibrium nature of the plasma is confirmed by a Mott-transition based
study of the plasma transport.
We report on the structural characterization of InAs/(GaIn)Sb superlattices (SL) grown by solid-source molecular-beam epitaxy. SL periodicity and overall structural quality were assessed by high-resolution X-ray diffraction and Raman spectroscopy. Spectroscopic ellipsometry was found to be sensitive to the (GaIn)Sb alloy composition.