This paper reports an extensive interfacial study of Cu deposited on Ta and TaN barrier layers. It has been reported that the Cu/Ta interface develops a uniform and thin amorphous layer at the interface upon thermal treatment[l]. However, our high resolution transmission electron microscopy (HRTEM) analysis shows atomically sharp interfaces for all conditions without any amorphous layer at the interfaces, especially for the ones which underwent one hour annealing at 400°C and 500°C. The “amorphization” effect is only observed if the Cu/Ta TEM specimen is exposed to oxygen. It exists usually at the thinner regions of the TEM specimen or if the specimen is left in air for > 24 hours. Energy dispersion x-ray (EDX) analysis of the “amorphized” region shows that it is a mixture of Cu, Ta, and O.