11 results
Introduction to Silicon Carbide — Materials, Processing and Devices – ADDENDUM
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- Journal of Materials Research / Volume 28 / Issue 5 / 14 March 2013
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- 11 March 2013, p. 786
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- 14 March 2013
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Introduction
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- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
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- 25 February 2013, p. i
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- 14 January 2013
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Correlation between macroscopic and microscopic stress fields: Application to the 3C–SiC/Si heteroepitaxy
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- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
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- 27 November 2012, pp. 104-112
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- 14 January 2013
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Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate
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- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
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- 30 August 2012, pp. 94-103
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- 14 January 2013
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Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates
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- Journal of Materials Research / Volume 28 / Issue 1 / 14 January 2013
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- 24 July 2012, pp. 129-135
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- 14 January 2013
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Single Shockley Faults Evolution Under UV Optical Pumping
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- MRS Online Proceedings Library Archive / Volume 1246 / 2010
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- 01 February 2011, 1246-B03-06
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- 2010
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Evolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics
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- MRS Online Proceedings Library Archive / Volume 1246 / 2010
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- 01 February 2011, 1246-B03-04
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- 2010
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Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure
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- MRS Online Proceedings Library Archive / Volume 1246 / 2010
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- 01 February 2011, 1246-B03-07
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- 2010
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Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
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- MRS Online Proceedings Library Archive / Volume 911 / 2006
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- 01 February 2011, 0911-B10-02
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- 2006
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High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization
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- MRS Online Proceedings Library Archive / Volume 911 / 2006
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- 01 February 2011, 0911-B02-01
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- 2006
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Investigation on C54 nucleation and growth by micro-Raman imaging
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- MRS Online Proceedings Library Archive / Volume 611 / 2000
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- 14 March 2011, C8.3.1
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- 2000
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