We have investigated the properties of light-emitting porous silicon (LEpSi) after standard microelectronic processing steps such as annealing, thermal and chemical oxidation, ion implantation, and reactive ion etching. The nature of the physical and chemical changes induced by these processing steps is studied. After thermal or chemical oxidation, the photoluminescence (PL) from LEpSi is blue shifted and more stable. Low dose dopant implantation essentially keeps the PL spectrum unchanged. Thermal annealing after ion implantation affects the PL intensity differently, depending on the type of ions. Reactive ion etching changes the surface morphology and shifts the PL peak to blue.