Polycrystalline CdTe films were grown by a hot-wall-close space vapor transport technique. In-doped CdTe films were grown onto conductive tin-oxide glass substrates. In order to produce Cd-vacancies, the films were photocorroded using the electrochemical arrangement reported by C. Vazquez-Lopez et al . CdTe films were photocorroted during different times of illumination. Photoluminescence spectra of these films showed that the peak at 1.55eV grows with the photocorrosion time. Our results indicate that the 1.55 peak is associated to Cd-vacancies which are produced during the photo-corrosion process.