An image sensor with enhanced sensitivity for near ultraviolet radiation (UVA) has been fabricated in TFA (Thin Film on ASIC) technology. The device employs an amorphous silicon pin detector optimized for UV detection by carbonization and layer thickness variation. The front electrode consists of an Al grid or TCO. Measurements show a peak responsivity of 90 mAW-1 at 380 nm. The UV Imager prototype consists of 128 × 128 pixels with a size of 25 μm × 25 [tim each, fabricated in a 0.7 μm CMOS process. Global sensitivity control serves to achieve a dynamic range in excess of 80 dB. The sensor can be used in fields such as chemical, medical and astronomical applications. Furthermore, a UV monitor has been developed, suited to warn of excessive sunlight exposure, considering skin type and sun protection factor.