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Spectral imaging cathodoluminescence and micro-Raman spectroscopy studies of GaAs layers grown on Si substrates by the conformal method allow to reveal a great variety of physical features of the layers, such as the complete stress distribution, self-doping effects, or the incorporation of dopants. We present herein the characterization of GaAs conformal layers grown by hydride vapor phase epitaxy, where the main issues concerning the distribution of defects and stresses are revealed. Also, intentionally doped layers were analyzed, revealing the main aspects of the incorporation of dopant impurities during growth.
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