Ruthenium oxide (RuO2) / tantalum nitride (Ta2N) precision thin film resistors were fabricated by dc magnetron reactive sputtering. Proper thermal treatment was utilized to tune the temperature coefficient of resistance (TCR) to near zero. The TCR of these samples could be easily tuned to ±10 ppm/°C. Accelerated life time (ALT) tests at 150 °C for up to 1000 hours demonstrated very good stability both in p□(Δp/p≤0.5%)and TCR (ΔTCR ≤ ±2 ppm/°C). Auger electron spectroscopy (AES) showed that the RuO2 cap layer became deficient in oxygen after annealing, with Ru-Ta-O and Ta2O5 sublayers as the interfacial reaction products. The upper layer of Ta2N was oxidized. Transmission electron microscopy (TEM) revealed that the sample underwent a (re)crystallization. The as-deposited Ta2N was a uniform amorphous phase, and the as-deposited RuO2 possessed fine microcrystals embedded in an amorphous matrix. Crystallization and oxidation occurred in the Ta2N film during annealing, with recrystallization and oxygen redistribution in the RuO2 film.