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2 results

Molecular Beam Epitaxy of AlN Layers on Si (111)
Jean-Christophe Moreno, Eric Frayssinet, Fabrice Semond, Jean Massies
Journal: MRS Online Proceedings Library Archive / Volume 1068 / 2008
Published online by Cambridge University Press: 01 February 2011, 1068-C03-05
Print publication: 2008
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In this work, we present a study of epitaxial Aluminium Nitride (AlN) for thin film bulk acoustic wave (BAW) applications. Molecular beam epitaxy (MBE) was used to perform high crystalline quality AlN thin films growth on different silicon substrate preparations. A morphological study was performed by atomic force microscopy (AFM) and scanning electron microscopy (SEM), while structural properties and acoustic wave speed were respectively assessed by X-ray diffraction and acoustic picoseconds.

Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE
Fabrice Semond, Yvon Cordier, Franck Natali, Arnaud Le Louarn, Stéphane Vézian, Sylvain Joblot, Sébastien Chenot, Nicolas Baron, Eric Frayssinet, Jean-Christophe Moreno, Jean Massies
Journal: MRS Online Proceedings Library Archive / Volume 1068 / 2008
Published online by Cambridge University Press: 01 February 2011, 1068-C04-04
Print publication: 2008
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During the last ten years, we have developed an efficient growth process of nitrides on silicon substrates by molecular beam epitaxy. In collaboration with partners AlGaN/GaN HEMTs on Si having promising performances have been fabricated. Focusing on the growth aspect and underlying some of the key issues, we present in this paper an overview of our contribution in the field of AlGaN/GaN HEMTs on Si substrates.