Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. We report conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 °C. The conductivity as well as the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor (σo) as well as the conductivity (σ) itself as a function of the activation energy (Ea) show a slope inversion for both n and p materials at an activation energy or about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data.