InP membranes have been bonded oxide mediated onto a patterned and unpatterned Si substrate. Indentation is shown to allow local testing on patterned areas. Both responses on patterned and unpatterned are compared and placed in reference to oxide free bonded membranes. Delamination of the membrane was observed to depend on the presence of patterns in the Silicon substrate. It occurs when the indenting load reached 55 mN for an oxide mediated bonded unpatterned structure and 42 mN for an oxide mediated bonded patterned one. This is in both cases below the value of 80 mN obtained for an oxide free bonded membrane (unpatterned). Weibull analysis of these events yielded a modulus m of magnitude 6 to 10, indicating that delamination fracture is relatively predictable with a weaker resistance obtained in patterned oxide mediated bonding. Delamination of the membrane is the result of constraint of plastic flow by the InP/Si interface. Membrane rotation is induced and increases with the indentation load, until it is sufficient to initiate and propagate an interfacial crack.

Instrumented nanoindentation and STEM have been combined ex situ to study the adhesion of 450 nm thick InP membranes to Si substrates. Three distinct regimes are identified in the deformation of the InP/Si stacks during these experiments: the first is plastic flow of InP at low loads; the second is elastic debonding of the InP membrane, far from the indented zone at medium loads; lastly, the local amorphisation of the underlying Si substrate at high loads. The regime of intermediate loads is shown to be particularly useful in the evaluation of the surface bonding energy of InP to Si.

InP membranes have been bonded both oxide free and oxide mediated onto a Si substrate. The mechanical responses of the obtained thin (0.4 µm) membranes could be tested by nanoindentation and compared. Delamination of the membrane was observed to occur when the indenting load reached 55 mN for an oxide mediated bonded structure and 80 mN for an oxide free bonded one. Weibull analysis of these events yielded a modulus m of magnitude 6 to 10, indicating that delamination fracture is relatively predictable with a stronger interface obtained in oxide free approach. Delamination of the membrane is the result of constraint of plastic flow by the InP/Si interface. Membrane rotation is induced and increases with the indentation load, until it is sufficient to induce and propagate an interfacial crack.

New fabrication routes for hybrid photonic devices are explored. We report on silicon bonding to III-V semi-conducteurs e.g. Si/InP for emission/amplification function. The materials have been bonded to silicon since it can be nanostructured to obtain optical guides. The bonded surfaces are of the order of ∼ 1 cm2. Special attention has been paid to the surface preparation. The obtained structure has been characterized employing XRD while the mechanical response and interface strength have been investigated employing instrumented nanoindentation.

The (001) GaAs surfaces have been modified by thin elastically stressed InGaAs-buried layers and tested under Berkovich contact. The elastic–plastic transition determined from the pop-in event observed in the force control mode of the indentation machine appears at slightly lower loads (0.44–0.46 mN) when compared to bare GaAs surface (0.50 mN). Estimations indicate that for both studied sublayers, the stored elastic energy is about 20% of the elastic indentation energy reached at elastic–plastic transition when the sublayer is observed not to relax plastically.

Graphene is generating a considerable interest in materials science and condensed-matter physics. One crucial technological problem, that will govern future applicability of this material, is related to the patterning of graphene while preserving the exceptionally high crystallinity and electronic properties of this material. This article is aiming at demonstrating that a highly focused beam of gallium ions can be applied for sculpting ultra-thin and high quality suspended graphene nano-ribbons (GNRs).

Highly Focused Ion Beams (FIB) are used to produce in one step large quantities of solid state nanopores drilled in thin dielectric films with high reproducibility and well controlled morphologies. We explore both the production of nanopores of various diameters and study their applicability to different biological molecules such as DNA, or folded and unfolded proteins, and then we compare their transport properties. We also report on the translocation of Fibronectin which an original experiment made possible is using the methodology described in this article.

Residual stresses in sputtered ZnO films on Si are investigated and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films encapsulated or not by Si3N4 protective coatings are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After a heat treatment at 800°C, ZnO films are tensily stressed while ZnO films encapsulated by Si3N4 are stress-free. With the aid of in-situ X-ray diffraction, we argue that this thermally-activated stress relaxation can be attributed to a variation of the chemical composition of the ZnO films.