Charged particle microscopes have been used extensively for the creation of nanostructures. As a subset of the techniques for this, the process of beam-induced chemistry offers almost endless flexibility for both additive (by beam-driven precursor deposition) and subtractive (by beam-catalyzed etching) processing. A recent review article makes it evident simply by its massive page count the number of materials that have been used to deposit a variety of conductive, insulating, magnetic, photonic, and other structures. To take advantage of these capabilities, though, the nanoarchitect must select the correct settings for a large number of parameters. One key figure of interest is the size of features that can be written by deposition of conducting material: how small can we go? Process development is complex, however: a standard beam-induced deposition process using the system described below calls for the control of sixteen different parameters! Several of these are used to set the flow of the reactant, several are required for defining the particle beam, and yet another set of parameters call out the routine by which the beam is scanned over the pattern of interest. In the end, the result provides just one recipe for one chemistry with one beam type. The wide scatter of reported outcomes in the review article mentioned above indicates the complexity of the problem, where each result given can be considered just a snapshot of one small corner of the parameter space. Our goal here is to apply a quantitative optimization methodology for the determination of beam chemistry processes in the helium ion microscope (HIM). In this article, we discuss efforts toward finding the minimum obtainable line width and gap width between line pairs of deposited platinum lines and giving a predictive formulation of the same.