16 results
High Mobility Channel Materials and Novel Devices for Scaling of Nanoelectronics beyond the Si Roadmap
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1194 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1194-A07-01
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- 2009
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Catalytic Forming Gas Anneal on III-V/Ge MOS Systems
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1194 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1194-A07-06
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- 2009
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N+/P and P+/N Junctions in Strained Si on Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure
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- Journal:
- MRS Online Proceedings Library Archive / Volume 864 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, E3.7
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- 2005
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P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 864 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, E9.26
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- 2005
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Electron irradiation effect on thermal donors in CZ-Si
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- Journal:
- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 133-135
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- July 2004
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Analysis of junctions formed in strained Si/SiGe substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 809 / 2004
- Published online by Cambridge University Press:
- 17 March 2011, B6.4
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- 2004
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Doping of Oxidized Float Zone Silicon by Thermal Donors - a Low Thermal Budget Doping Method for Device Applications?
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- Journal:
- MRS Online Proceedings Library Archive / Volume 719 / 2002
- Published online by Cambridge University Press:
- 01 February 2011, F9.5
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- 2002
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Mechanical stress of the electrical performance of polycrystalline-silicon resistors
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- Journal:
- Journal of Materials Research / Volume 16 / Issue 9 / September 2001
- Published online by Cambridge University Press:
- 31 January 2011, pp. 2579-2582
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- September 2001
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Influence of Mechanical Stress on The Electrical Performance of Polycrystalline-Silicon Resistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 609 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, A29.3
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- 2000
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Impact of The ge Content on The Radiation Hardness of Hetero-Junction Diodes in Sige Strained Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 533 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 99
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- 1998
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Degradation and Recovery of Si Diodes by 20-Mev Protons And 220-Mev Carbon Particles
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- Journal:
- MRS Online Proceedings Library Archive / Volume 487 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 435
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- 1997
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Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles
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- Journal:
- MRS Online Proceedings Library Archive / Volume 487 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 429
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- 1997
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Radiation Damage Of InGaAs Photodiodes By High Energy Particles
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- Journal:
- MRS Online Proceedings Library Archive / Volume 487 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 471
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- 1997
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Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate
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- Journal:
- MRS Online Proceedings Library Archive / Volume 487 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 387
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- 1997
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On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 35
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- 1995
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Substrate and Particle Dependent Deep Level Generation in Silicon by MeV Particle Beams
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- Journal:
- MRS Online Proceedings Library Archive / Volume 279 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 93
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- 1992
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