For the successful integration of ferroelectric thin films in IC technology, there is a need for a deposition technique capable of growing homogeneous layers at high growth rates over large-area structured substrates. Organometallic chemical vapor deposition (OMCVD) is a promising technique for meeting these demands.
Ferroelectric layers of PbZrxTi1-xO3 (PZT) were grown by OMCVD on Pt-coated 10 cm diameter Si-substrates using the precursors tetra-ethyl-lead, tetra-iso-propoxy-titanium and tetra-tertiary-butoxy-zirconium at 700 °C without any post anneal. At this temperature the layers are single phase and highly (h00) and/or (00l) oriented. The layers show good ferroelectric switching properties with high remanent polarizations, but also with high coercive field strengths. Fatigue measurements are presented for these OMCVD grown PZT layers. The layers have a switching lifetime exceeding 1011 cycles at a switching amplitude of 5 V.