The COllaborative project of Development of Anthropometrical measures in Twins (CODATwins) project is a large international collaborative effort to analyze individual-level phenotype data from twins in multiple cohorts from different environments. The main objective is to study factors that modify genetic and environmental variation of height, body mass index (BMI, kg/m2) and size at birth, and additionally to address other research questions such as long-term consequences of birth size. The project started in 2013 and is open to all twin projects in the world having height and weight measures on twins with information on zygosity. Thus far, 54 twin projects from 24 countries have provided individual-level data. The CODATwins database includes 489,981 twin individuals (228,635 complete twin pairs). Since many twin cohorts have collected longitudinal data, there is a total of 1,049,785 height and weight observations. For many cohorts, we also have information on birth weight and length, own smoking behavior and own or parental education. We found that the heritability estimates of height and BMI systematically changed from infancy to old age. Remarkably, only minor differences in the heritability estimates were found across cultural–geographic regions, measurement time and birth cohort for height and BMI. In addition to genetic epidemiological studies, we looked at associations of height and BMI with education, birth weight and smoking status. Within-family analyses examined differences within same-sex and opposite-sex dizygotic twins in birth size and later development. The CODATwins project demonstrates the feasibility and value of international collaboration to address gene-by-exposure interactions that require large sample sizes and address the effects of different exposures across time, geographical regions and socioeconomic status.

Gac is a dioecious tropical and perennial climber. The fruit is a rich source of carotenoids and is used in traditional cuisine and medicine. Improving propagation methods using simple techniques would increase production and improve conservation in regional areas. This study evaluated temperature requirements for seed germination, the use of rooting hormones to strike female cuttings and the grafting of female scions onto seedling rootstock. Seed germination was optimised between 25 and 35 °C, with a maximum germination percentage of 91% at 30 °C. However, increasing storage time from 6 to 18 months under laboratory conditions (21 ± 1°C and 60% relative humidity) reduced germination and this was associated with seed weight loss, highlighting the need to develop storage guidelines, particularly for the higher temperature and humidity conditions where Gac is grown. Survival of softwood cuttings was improved from 53 to 77% with indole-3-butyric acid (IBA) (3–5 g/L) and semi-hardwood cuttings did not require IBA treatment. Both splice and wedge grafting techniques achieved a survival rate > 53% and with the youngest rootstock (4 and 8 weeks) this increased to > 85%. Further work could investigate the production potential of crops using cuttings and grafted plants.

This study evaluated the annual prevalence of anogenital warts (AGW) caused by human papillomavirus (HPV) and analysed the trend in annual per cent changes (APC) by using national claims data from the Health Insurance Review and Assessment of Korea, 2007–2015. We also estimated the socio-economic burden and co-morbidities of AGW. All analyses were performed based on data for primary A63.0, the specific diagnosis code for AGW. The socio-economic cost of AGW was calculated based on the direct medical cost, direct non-medical cost and indirect cost. The overall AGW prevalence and socio-economic burden has increased during the last 9 years. However, the prevalence of AGW differed significantly by sex. The female prevalence increased until 2012, and decreased thereafter (APC + 3·6%). It would fall after the introduction of routine HPV vaccination, principally for females, in Korea. The male prevalence increased continuously over time (APC + 11·6%), especially in those aged 20–49 years. Referring to the increasing AGW prevalence and its disease burden, active HPV infection control surveillance and prevention in males are worth consideration.

This study aimed to examine the association between vitamin B6, folate and vitamin B12 biomarkers and plasma fatty acids in European adolescents. A subsample from the Healthy Lifestyle in Europe by Nutrition in Adolescence study with valid data on B-vitamins and fatty acid blood parameters, and all the other covariates used in the analyses such as BMI, Diet Quality Index, education of the mother and physical activity assessed by a questionnaire, was selected resulting in 674 cases (43 % males). B-vitamin biomarkers were measured by chromatography and immunoassay and fatty acids by enzymatic analyses. Linear mixed models elucidated the association between B-vitamins and fatty acid blood parameters (changes in fatty acid profiles according to change in 10 units of vitamin B biomarkers). DHA, EPA) and n-3 fatty acids showed positive associations with B-vitamin biomarkers, mainly with those corresponding to folate and vitamin B12. Contrarily, negative associations were found with n-6:n-3 ratio, trans-fatty acids and oleic:stearic ratio. With total homocysteine (tHcy), all the associations found with these parameters were opposite (for instance, an increase of 10 nmol/l in red blood cell folate or holotranscobalamin in females produces an increase of 15·85 µmol/l of EPA (P value <0·01), whereas an increase of 10 nmol/l of tHcy in males produces a decrease of 2·06 µmol/l of DHA (P value <0·05). Positive associations between B-vitamins and specific fatty acids might suggest underlying mechanisms between B-vitamins and CVD and it is worth the attention of public health policies.

Δ14C values of leaves of deciduous trees provide a means to map the regional-scale fossil fuel ratio in the atmosphere. We collected a batch of ginkgo (Ginkgo biloba Linnaeus, a deciduous tree) leaf samples from across Korea in the month of July in both 2010 and 2011 to obtain the regional distribution of Δ14C. The Δ14C values of the samples were measured using accelerator mass spectrometry (AMS) at the Korea Institute of Geoscience and Mineral Resources (KIGAM). The average of the Δ14C values from clean air sites in Korea in 2011 measured slightly lower than the average of Δ14C values in 2010. Distribution maps of Δ14C of 2011 and 2010 in Korea were made based on a series of Δ14C values of ginkgo leaf samples from Korea using the Geostatistical and Spatial analyst tools in ESRI's ArcMap software. The distribution maps of Δ14C showed that Δ14C values in the western part of Korea are lower than those in the eastern part of Korea. This is because the western part of Korea is densely populated and contains many industrial complexes, and also because westerly winds from China, containing CO2 from fossil fuel use, blow into Korea. We compared the distribution maps of 2010 and 2011 and tried to find traces of the Fukushima power plant accident in Japan.

The UFFO (Ultra-Fast Flash Observatory) is a GRB detector on board the Lomonosov satellite, to be launched in 2013. The GRB trigger is provided by an X-ray detector, called UBAT (UFFO Burst Alarm & Trigger Telescope), which detects X-rays from the GRB and then triggers to determine the direction of the GRB and then alerts the Slewing Mirror Telescope (SMT) to turn in the direction of the GRB and record the optical photon fluxes. This report details the calibration of the two components: the MAPMTs and the YSO crystals and simulations of the UBAT. The results shows that this design can observe a GRB within a field of view of ±35° and can trigger in a time scale as short as 0.2 – 1.0 s after the appearance of a GRB X-ray spike.

The Ultra-Fast Flash Observatory (UFFO), which will be launched onboard the Lomonosov spacecraft, contains two crucial instruments: UFFO Burst Alert & Trigger Telescope (UBAT) for detection and localization of Gamma-Ray Bursts (GRBs) and the fast-response Slewing Mirror Telescope (SMT) designed for the observation of the prompt optical/UV counterparts. Here we discuss the in-space calibrations of the UBAT detector and SMT telescope. After the launch, the observations of the standard X-ray sources such as pulsar in Crab nebula will provide data for necessary calibrations of UBAT. Several standard stars will be used for the photometric calibration of SMT. The celestial X-ray sources, e.g. X-ray binaries with bright optical sources in their close angular vicinity will serve for the cross-calibration of UBAT and SMT.

3D integration enabled by through-silicon-via (TSV) allows continued performance enhancement and power reduction for semiconductor devices, even without further scaling. For TSV wafers with all Applied Materials unit processes, we evaluate the integrity of oxide liner and copper barrier by capacitance-voltage (C-V) and current-voltage (I-V) measurements, from which oxide capacitance, minimum TSV capacitance, and leakage current are extracted. The capacitance values match well with model predictions. The leakage data also demonstrate good wafer-scale uniformity. The liner and barrier quality are further verified with microanalysis techniques.

Greater cultivation of the underutilised Gac fruit, Momordica cochinchinensis, by poorly resourced householders and farmers would potentially improve livelihoods, and, on a larger scale, meet the increasing demand for Gac as a health product. Cultivation methods need to be developed to suit small- and large-scale production and must consider the unpredictable ratio of male to female plants grown from seed, and slow growth induced by cool temperatures. In this study, we examined the responses of Gac to propagation and protected cropping techniques to identify potential methods for increasing production. Plants germinated from seed in seed-raising mix under warm and humid conditions were grown hydroponically to maturity in a climate-controlled greenhouse during a temperate winter, producing fruits that were harvested ripe, from 44 weeks after sowing. Cuttings taken from female plants were dipped in indole-3-butyric rooting hormone powder or gel, or were left untreated, and then placed in rock wool, potting mix, water or closed media sachet. All treatment combinations, with the exception of the untreated potting mix, permitted the development of healthy plants in a second greenhouse crop. Growing plants from seed, then vegetatively increasing the number of productive female plants by cuttings is a means to increase Gac production with limited resources. Gac production using greenhouse technology, as described here for the first time, is relevant to other temperate regions. The finding that larger fruits have a higher percentage of edible aril than smaller fruits provides a new area of investigation towards enhancing production.

Strong blue, red and near-infrared photoluminescence has been observed from Si+-implanted and pulse-annealed SiO2 layers. Raman scattering and high-resolution electron microscopy analyses have revealed a correlation between the structure of the Si inclusions in the SiO2 matrix and the photoluminescence. Structural transformations in the Si-rich SiO2 layers during pulse and furnace annealing have been discussed in terms of the changes in the light emission observed experimentally. Small Si clusters, non-crystalline inclusions and nanocrystals are believed to be the light sources. The blue, red and near-infrared photoluminescence is associated with small complexes of excess Si atoms, non-crystalline Si nanoinclusions and quantum-confined Si nanocrystals, respectively.

Cluster ion implantation is an attractive alternative to conventional ion implantation, particularly for shallow junction formation. It is easy to obtain high-current ion beams with low equivalent energy using cluster ion beams. The implanted boron distribution in 5keV B10H14 implanted Si is markedly shallower than that in 5keV BF2 ion implanted Si. The implanted depth is less than 0.04 μm, indicating that cluster ion implantation is capable of forming shallow junctions. The sheet resistance of 3keV B10H14 implanted samples falls below 500 Ω/sq after annealing at 1000°C for 10s. Shallow implantation can be realized by a high energy cluster beam without space-charge problems in the incident beam. Defect formation, resulting from local energy deposition and multiple collisions, is unique for cluster ions. The thickness of the damaged layer formed by cluster ion bombardment increases with the size of the cluster, if implant energy and ion dose remain constant. This is one of the nonlinear “cluster effects,” which may allow some control over the implant damage distributions that accompany implanted ions, and which have been shown to have a great effect on dopant redistribution during annealing

GaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH4 gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH3. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.

A review of MeV-ion beam induced crystallization (IBIEC) and interfacial amorphization (IBIIA) in III-V compounds (GaAs, InAs, GaP, InP) is given. The kinetics of IBIEC and IBIIA is studied as a function of the temperature, the density of the displacements v, and the ion dose rate j. Reversal temperatures TR for IBIEC ↔ IBIIA transitions are determined for the different materials showing characteristic dependences on v and j. The IBIEC rate is shown to be controlled by point defect diffusion towards the a/c-interface and additionally modified by the interface structure. The suppression of microtwin and stacking fault formation during IBIEC is explained by the fact that the ion beam modifies the orientation dependence of the crystallization kinetics avoiding the disintegration and (111)-faceting of the (100)-interface. For all the compound materials investigated the IBIEC process is stopped above critical temperatures and doses. The capture of diffasing defects by crystallites growing in the amorphous layers is considered to be responsible for the stopping of the IBIEC interface. Ways are demonstrated to avoid stopping, to achieve complete epitaxial regrowth also of thick layers, and to minimize the generation of stable damage in the crystallized layers. The limited temperature ranges for undisturbed IBIEC and IBIIA in III/V-compounds are explained by low nucleation barriers and high growth rates both of crystallites and of amorphous zones.

We report the results of using sputtering and negative carbon ion sources to prepare thin films of carbon nitride. In this work, we compare the structural, tribological, and optical properties of the carbon nitride films that were prepared by two different ion assisted techniques. In the first approach we used a magnetron gun to sputter deposit carbon in a nitrogen atmosphere. The second method utilized a beam of negatively charged carbon ions of 1 to 5 μA/cm2 current density impinging the substrate simultaneously with a positive nitrogen ion beam produced by a Kaufman source. We were able to synthesize microscopically smooth coatings with the carbon to nitrogen ratio of 1 : 0.47. These films possess wear rates lower than 5×10−7 mm3/Nm and friction coefficients in the range of 0.16 to 0.6. Raman spectroscopy revealed that the magnetron sputtered films are more structurally disordered than those formed with the negative carbon ion gun. FTIR showed the presence of the C≡N stretching mode in both types of films. Finally, spectroscopic ellipsometry produced films with dielectric constants as low as 2.3 in the photon energy range from 1.2 to 5 eV.