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The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. A camera based on such a material presents an extremely low dark current at room temperature. It can compete with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane arrays for low flux measurements. First, we will present results on focal plane array of 320 × 256 pixels with a pitch of 30 μm. The peak responsivity is tuned from 260 nm to 360 nm in different cameras. All these results are obtained in a standard SWIR supply chaine and with AlGaN Schottky diodes grown on sapphire. We will present here the first attempts to transfer the standard design Schottky photodiodes on from sapphire to silicon substrates. We will show the capability to remove the silicon substrate, to etch the window layer in order to extend the band width to lower wavelength and to maintain the AlGaN membrane integrity.
The solvent, supercritical antisolvent technique (SAS) has been used to produce submicronic particles of yttrium acetate for the synthesis of YBCO superconductors. For this purpose, in a continuous SAS apparatus dimethylsulfoxide (DMSO) as yttrium acetate solvent and supercritical carbon dioxide as antisolvent have been adopted. Experiments have been performed in the pressure range between 70 and 160 bar and for temperatures between 40 and 70 °C. Different concentrations of yttrium acetate in DMSO have also been tested. Various morphologies of yttrium acetate particles have been obtained, having mean particle diameters from 0.1 to 7 μm. At 40 °C and pressures larger than 120 bar, submicronic spherical particles of yttrium acetate of about 0.1 μm diameter and with a narrow particle size distribution have been achieved.
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