We investigated the performance of 65nm pFETs whereby the source and drain extensions (SDE) were implanted with Carborane, (C2B10H12) a novel form of molecular species. The high atomic mass of this molecule (146 a.m.u.) and the number of boron atoms transported per ion enables the productivity at low energy required for manufacturing of ultra shallow junctions for advanced scaling. In this investigation, Carborane was implanted at 13 keV to produce a Boron profile near equivalent to that produced by the reference BF2 implant. Results of electrical measurements did not exhibit any compromise in the I-V characteristics in terms of Id-Vg and Id-Vd and Ion-Ioff. External resistance and Vt roll-off shifted slightly with respect to the reference devices. This is attributed to a deeper junction with Carborane due to slight offset in the profile matching. It will be shown that with fully matched profiles, a perfect match of the device characteristics can be achieved.