We studied formation and annihilation of dislocation loops formed beyond the amorphous/crystalline interface after indium and boron dual implantation and subsequent annealing in the 800–1 100°C temperature range. The residual damage for low (40 keV) and high (200 keV) energy In implants were compared. The depth of the amorphous region in the sample implanted with the higher energy ions was reduced by using anodic oxidation and etching, to equate it with that of the sample implanted by lower energy ions. This enabled the study of the effect of surface proximity on residual disorder upon annealing. The damage was strongly dependent on the energy of In ions. No end-of-range damage was observed for the low energy implant. High energy implantation resulted in end-of-range dislocation loops, stable below 1050°C. The loops kinetics was neither affected by their proximity to the surface, nor by In precipitation. Monte-Carlo full cascade simulation has been used to estimate the depth distribution of interstitials and vacancies produced by In implant.