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We report Mn-doped GaN nanowires exhibiting ferromagnetism even at room temperature. The growth of single-crystalline wurtzite structured GaN nanowires doped homogeneously with about 5 atomic % Mn was achieved by chemical vapor deposition using the reaction of Ga/GaN/MnCl2 with NH3. The ferromagnetic hysteresis at 5 and 300 K and the temperature-dependent magnetization curves suggest the Curie temperature around 300 K. Negative magnetoresistance of individual nanowires was observed at the temperatures below 100 K.
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