In this work we examine the electrical characteristics and the memory properties of metal-alumina-nitride-oxide-silicon (MANOS) devices as a function of the post deposition annealing conditions. Post deposition annealing of the samples was performed at 850 or 1050 °C in nitrogen ambient using two different processes: (1) Furnace annealing for 15 min and (2) rapid thermal annealing for 1 or 5 min. The capacitance equivalent thickness as extracted from the capacitance voltage characteristics depends strongly on the annealing process, being smallest for the furnace annealing. Furthermore, the experimental results indicate that the type of the annealing determines the defect state density of the Al2O3 layer, via which the undesired effect of gate electrode electron injection takes place in the negative voltage regime. For inert ambient annealing the furnace process appears more efficient as compared to RTA.