Silver nanowire-based contacts represent one of the major new directions in transparent contacts for opto-electronic devices with the added advantage that they can have Indium-Tin-Oxide-like properties at substantially reduced processing temperatures and without the use of vacuum-based processing. However, nanowires alone often do not adhere well to the substrate or other film interfaces; even after a relatively high-temperature anneal and unencapsulated nanowires show environmental degradation at high temperature and humidity. Here we report on the development of ZnO/Ag-nanowire composites that have sheet resistance below 10 Ω/sq and >90% transmittance from a solution-based process with process temperatures below 200 °C. These films have significant applications potential in photovoltaics and displays.

Beta-gallium oxide (β-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality β-Ga2O3 films on (0001) sapphire and (−201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of β-Ga2O3 from 350 to 550 °C.

The emergence of methyl-ammonium lead halide (MAPbX3) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this “defect tolerance” emerges from fundamental electronic-structure properties, including the orbital character of the conduction and valence band extrema, the charge-carrier effective masses, and the static dielectric constant. We use MaterialsProject.org searches and detailed electronic-structure calculations to demonstrate these properties in other materials than MAPbX3. This framework of materials discovery may be applied more broadly, to accelerate discovery of new semiconductors based on emerging understanding of recent successes.

Nanoscale metal–insulator–metal (MIM) diodes consisting of a nanoscale-thickness insulator layer sandwiched between two dissimilar metal layers offer the potential for very high frequency alternating current to direct current signal rectification. Active nanoscale tuning of electronic tunneling through the insulator layer to form point contact diodes has previously been limited to barriers composed of soft organic films due to the force limitations of conductive-atomic force microscopy. In this paper, MIM diodes with oxide-based insulators are formed in situ with sub-nanometer depth precision and characterized using a nanoindenter equipped with electrical testing capabilities. Simultaneous measurement of both electrical and nano-mechanical information is accomplished in an MIM stack of the form Nb/Nb2O5/boron-doped diamond nanoindenter tip. Using this technique, we show that the diode behavior can be electromechanically tuned over a range of more than 1 V at equivalent currents via small changes in indentation depth and the results can be modeled using a Fowler–Nordheim approximation.