MOCVD is a useful method for the deposition of thin films of metal oxides containing early transition metals, e.g., lead zirconium titanate, (PZT), because of its good step coverage and control of composition. Results are presented on a number of novel compounds which may be, or are, good MOCVD precursors. The compounds studied are in several general classes and include M(←diket)x, M(OR)x, M(←diket)x (OR)y [where M = Ti, Zr, Hf, Ta; ←-diket = tmhd (2,2,6,6-tetramethylheptane-3,5-dione), acac (acetylacetonate), hfac (1,1,1,5,5,5-hexafluoroacetylacetonate); R = Me, Et, Pr1, Butt]. We have sought to modify the precursors through chemical methods and have synthesized a number of novel, volatile, and intrinsically thermally stable MOCVD precursors. Full chemical characterization of the precursors (NMR, IR, MS, CHN, TGA/DSC, Single Crystal X-ray diffraction) has been undertaken.