We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(CH3)3]3 (E = P, As) and GaCl3. The size of the as synthesized clusters is 10 Å to 15 Å. Larger clusters of 20 Å to 30 Å size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 Å sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 Å, consistent with the results from X-ray diffraction of 19.5 Å for the same sample.